Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing al content of AlGaAs cladding layers

1989 ◽  
Vol 25 (12) ◽  
pp. 761 ◽  
Author(s):  
T.-H. Chong ◽  
K. Kishino
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Al Content ◽  
Visible Lasers ◽  
Cladding Layers ◽  
Remarkable Reduction

Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers

1991 ◽  
Vol 58 (9) ◽  
pp. 879-880 ◽  
Author(s):  
Jun‐ichi Hashimoto ◽  
Tsukuru Katsuyama ◽  
Jiro Shinkai ◽  
Ichiro Yoshida ◽  
Hideki Hayashi
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Strained Layer ◽  
Layer Structures ◽  
Visible Lasers

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

scholarly journals Рабочие характеристики полупроводниковых лазеров на квантовых ямах в зависимости от ширины волноводной области

2021 ◽  
Vol 55 (12) ◽  
pp. 1229
Author(s):  
З.Н. Соколова ◽  
Н.А. Пихтин ◽  
С.О. Слипченко ◽  
Л.В. Асрян
Keyword(s):  
Output Power ◽  
Current Density ◽  
Optical Loss ◽  
Optical Power ◽  
Pump Current ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Operating Characteristics ◽  
Optical Confinement ◽  
Cladding Layers

Operating characteristics of semiconductor quantum well (QW) lasers are theoretically studied in terms of the thickness of the waveguide region [optical confinement layer (OCL)]. We calculate the maximum modal gain, optical confinement factor (in QW, OCL, and cladding layers), threshold current density, electron and hole densities (in QW and OCL), internal optical loss (in QW, OCL, and cladding layers), internal differential quantum efficiency, stimulated and spontaneous recombination currents, and output optical power of the laser as functions of the OCL thickness. It is shown that up to the pump current density 50 kA/cm2 the output power of the considered lasers depends only slightly on the OCL thickness in the range of thicknesses 1.5–2.8 m. This result is important for designing high brightness lasers as broadened waveguides are used in such lasers to attain low beam divergence. At high pump current densities, the output power is shown to have a maximum as a function of the OCL thickness.

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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