N‐channel enhancement mode field‐effect transistors in Hg1−xCdxTe grown by organometallic epitaxy (direct alloy growth process)

1991 ◽  
Vol 59 (13) ◽  
pp. 1575-1577 ◽  
Author(s):  
I. B. Bhat ◽  
K. K. Parat ◽  
H. Ehsani ◽  
S. K. Ghandhi
Keyword(s):  
Field Effect ◽  
Growth Process ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Mode Field ◽  
Direct Alloy ◽  
Organometallic Epitaxy

Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning

2019 ◽  
Vol 52 (22) ◽  
pp. 225102
Author(s):  
Zhuodong Li ◽  
You Meng ◽  
Chao Wang ◽  
Youchao Cui ◽  
Zhao Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Mode Field

A Relationship between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

1995 ◽  
Vol 410 ◽  
Author(s):  
M. W. Dryfuse ◽  
M. Tabib-Azar
Keyword(s):  
Experimental Data ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Pertinent Literature ◽  
Enhancement Mode ◽  
Mode Field ◽  
Simplifying Assumptions

ABSTRACTAn explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship, the interface trap densities were calculated from transconductance data and compared to experimental data and that provided in the literature. Our expression provides a simple and convenient method to reliably estimate interface traps densities from the readily available transconductance data provided in the pertinent literature.

Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors

2016 ◽  
Vol 4 (22) ◽  
pp. 5102-5108 ◽  
Author(s):  
Marolop Simanullang ◽  
G. Bimananda M. Wisna ◽  
Koichi Usami ◽  
Wei Cao ◽  
Yukio Kawano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Germanium Nanowires ◽  
Enhancement Mode ◽  
Catalyst Free ◽  
Mode Field ◽  
P Type

The experimental demonstration of high-performance p-type enhancement-mode field-effect transistors fabricated from undoped and catalyst-free germanium nanowires.

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