Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires

2007 ◽  
Vol 90 (9) ◽  
pp. 093109 ◽  
Author(s):  
R. M. Ma ◽  
L. Dai ◽  
G. G. Qin
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Cds Nanowires

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning

2019 ◽  
Vol 52 (22) ◽  
pp. 225102
Author(s):  
Zhuodong Li ◽  
You Meng ◽  
Chao Wang ◽  
Youchao Cui ◽  
Zhao Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Mode Field

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

2019 ◽  
Vol 115 (11) ◽  
pp. 112103 ◽  
Author(s):  
Fu Chen ◽  
Ronghui Hao ◽  
Guohao Yu ◽  
Xiaodong Zhang ◽  
Liang Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors

High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

2006 ◽  
Vol 45 (No. 39) ◽  
pp. L1048-L1050 ◽  
Author(s):  
Takahiro Fujii ◽  
Norio Tsuyukuchi ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
P Type

Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

2013 ◽  
Vol 52 (1S) ◽  
pp. 01AG02 ◽  
Author(s):  
Qingpeng Wang ◽  
Kentaro Tamai ◽  
Takahiro Miyashita ◽  
Shin-ichi Motoyama ◽  
Dejun Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Enhancement Mode

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

2010 ◽  
Vol 3 (10) ◽  
pp. 101002 ◽  
Author(s):  
Tetsuya Fujiwara ◽  
Stacia Keller ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterojunction Field Effect Transistors

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Power Device ◽  
Enhancement Mode ◽  
High K ◽  
High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

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