Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide

1991 ◽  
Vol 59 (22) ◽  
pp. 2868-2870 ◽  
Author(s):  
R. C. Glass ◽  
L. M. Spellman ◽  
R. F. Davis
Keyword(s):  
Silicon Carbide ◽  
Titanium Nitride ◽  
Ohmic Contacts ◽  
Low Energy

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Stone–Wales defects created by low energy recoils in single-walled silicon carbide nanotubes

2009 ◽  
Vol 106 (8) ◽  
pp. 084305 ◽  
Author(s):  
Zhiguo Wang ◽  
Fei Gao ◽  
Jingbo Li ◽  
Xiaotao Zu ◽  
William J. Weber
Keyword(s):  
Silicon Carbide ◽  
Low Energy ◽  
Silicon Carbide Nanotubes

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Silicon Carbide ◽  
Ion Bombardment ◽  
Low Energy ◽  
Carbide Formation ◽  
Argon Ion Bombardment ◽  
Argon Ion

Ohmic Contacts to Silicon Carbide Devices

1992 ◽  
pp. 183-189 ◽  
Author(s):  
M. M. Anikin ◽  
M. G. Rastegaeva ◽  
A. L. Syrkin ◽  
I. V. Chuiko
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts

Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology

2017 ◽  
Vol 897 ◽  
pp. 375-378 ◽  
Author(s):  
Satoshi Torimi ◽  
Koji Ashida ◽  
Norihito Yabuki ◽  
Masato Shinohara ◽  
Takuya Sakaguchi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mechanical Strength ◽  
Chemical Etching ◽  
Imaging Technique ◽  
Low Energy ◽  
Indentation Hardness ◽  
High Quality ◽  
Surface Step ◽  
Low Energy Electron ◽  
Sic Wafer

As a new thinning and surface planarizing process of Silicon Carbide (SiC) wafer, we propose the completely thermal-chemical etching process; Si-vapor etching (Si-VE) technology. In this work, the effects of mechanical strength and surface step-terrace structure by Si-VE are investigated on the 4° off-axis 4H-SiC (0001) Si-face substrates. The indentation hardness of Si-VE surface is superior to the conventional chemo-mechanical polishing (CMP) surface even after epitaxial growth. The transverse strength of thinned Si-VE substrate is also superior to the conventional mechanically ground substrate. The surface step-terrace structures are observed by the low energy electron channeling contrast (LE-ECC) imaging technique. The latent scratch causes bunched step lines (BSLs) with various inhomogeneous step morphologies only on the CMP surface.

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

2000 ◽  
Vol 77 (10) ◽  
pp. 1478-1480 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
E. Danielsson ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Aluminum Ion ◽  
Ion Implanted

Mechanical characterisation of titanium nitride films formed by low- energy ion beam assisted deposition

1996 ◽  
Vol 84 (1-3) ◽  
pp. 439-442 ◽  
Author(s):  
A. Königer ◽  
J.W. Gerlach ◽  
H. Wengenmair ◽  
C. Hammerl ◽  
J. Hartmann ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Mechanical Characterisation ◽  
Ion Beam Assisted Deposition
Sign in / Sign up

Export Citation Format

Share Document