Chemical beam epitaxy of GaAsN∕GaAs multiquantum well solar cell

2007 ◽  
Vol 25 (3) ◽  
pp. 987 ◽  
Author(s):  
A. Freundlich ◽  
A. Fotkatzikis ◽  
L. Bhusal ◽  
L. Williams ◽  
A. Alemu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Chemical Beam Epitaxy ◽  
Multiquantum Well

1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy

1991 ◽  
Vol 59 (24) ◽  
pp. 3084-3086 ◽  
Author(s):  
W. T. Tsang ◽  
F. S. Choa ◽  
R. A. Logan ◽  
T. Tanbun‐Ek ◽  
M. C. Wu ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Buried Heterostructure ◽  
Multiquantum Well

Analysis of Current Transport Mechanisms in GaAsN Homojunction Solar Cell Grown by Chemical Beam Epitaxy

2013 ◽  
Vol 3 (2) ◽  
pp. 909-915 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Solar Cell ◽  
Chemical Beam Epitaxy ◽  
Current Transport ◽  
Transport Mechanisms

scholarly journals Design and Simulation of Multiquantum-Well AlGaAs/GaAs Single Junction Solar Cell with Back Surface Reflector

2012 ◽  
Vol 2012 ◽  
pp. 1-5
Author(s):  
Hamid Fardi
Keyword(s):  
Solar Cell ◽  
Cell Structure ◽  
Short Circuit ◽  
Cell Junction ◽  
Back Surface ◽  
Nonradiative Recombination ◽  
Hot Electron ◽  
Single Junction ◽  
Short Circuit Currents ◽  
Multiquantum Well

This paper reports on the design and simulation of a multiquantum Well (MQW) AlGaAs/GaAs single p-i-n junction cell with a Distributed Bragg Reflector (DBR) placed at back surface. The DBR structure reflects the part of the spectrum that benefits from absorption in the AlGaAs MQW structure, while being transparent to the IR spectrum. The addition of a DBR allows for a possible second bottom cell junction to be placed beneath the DBR in series with the MQW single cell for an additional efficiency enhancement. The efficiencies and short-circuit currents for the AlGaAs MQW cell with and without DBR are simulated. An energy balance equations model coupled with drift-diffusion equations is solved in heterojunction p-i-n with embedded quantum wells to model hot electron effects. The current-voltage characteristics of an MQW single junction AlGaAs/GaAs p-i-n solar cell structure were compared with measured data. The efficiencies and short-circuit currents of an optimized cell with and without DBR are simulated. Results obtained show improvement in short circuit current and efficiency when both MQW and DBR were used. Simulation results predict an efficiency of about 28.4% for the MQW AlGaAs-DBR single p-i-n junction photovoltaic cell under the presence of both radiative and nonradiative recombination mechanisms.

Properties of Chemical Beam Epitaxy grown GaAs0.995N0.005 homo-junction solar cell

2010 ◽  
Vol 10 (2) ◽  
pp. S188-S190 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Kenichi Nishimura ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Solar Cell ◽  
Chemical Beam Epitaxy ◽  
Junction Solar Cell
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