Role of amphoteric defects in the formation of metal/GaAs Schottky barriers

1991 ◽  
Vol 58 (24) ◽  
pp. 2785-2787 ◽  
Author(s):  
T. Zhang ◽  
T. W. Sigmon
Keyword(s):  
Schottky Barriers

scholarly journals The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

2015 ◽  
Vol 217 ◽  
pp. 43-46 ◽  
Author(s):  
Tzu-Liang Chan ◽  
Jaime Souto-Casares ◽  
James R. Chelikowsky ◽  
Kai-Ming Ho ◽  
Cai-Zhuang Wang ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Schottky Barriers

Theoretical Models of Schottky Barriers

1981 ◽  
Vol 10 ◽  
Author(s):  
M. Schluter
Keyword(s):  
Theoretical Models ◽  
Interface States ◽  
Schottky Barriers ◽  
Quantum Mechanical ◽  
Barrier Heights

ABSTRACTA review is presented in which existing theories of the formation of Schottky barriers are analyzed. The list includes macroscopic dielectric approaches and various microscopic quantum mechanical treatments. The central role of interface states and their different physical origins are assessed. Simple concepts, able to predict general trends in barrier heights, are examined along with detailed microscopic theories applied to individual contacts.

scholarly journals Schottky barriers on compound semiconductors: The role of the anion

1976 ◽  
Vol 13 (4) ◽  
pp. 802-806 ◽  
Author(s):  
J. O. McCaldin ◽  
T. C. McGill ◽  
C. A. Mead
Keyword(s):  
Compound Semiconductors ◽  
Schottky Barriers

Role of silicon vacancies in formation of Schottky barriers at Ag and Au contacts to 3C-and 6H-SiC

2002 ◽  
Vol 36 (6) ◽  
pp. 652-654 ◽  
Author(s):  
S. Yu. Davydov ◽  
A. A. Lebedev ◽  
O. V. Posrednik ◽  
Yu. M. Tairov
Keyword(s):  
Schottky Barriers

Effects of Surface Layer Defects and Adsorbed Oxygen on TiO2-Rutile Schottky Barriers

1981 ◽  
Vol 5 ◽  
Author(s):  
M. Levinson
Keyword(s):  
Surface Defects ◽  
Schottky Barriers ◽  
Adsorbed Oxygen ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Surface Conditions ◽  
Ohmic Behavior ◽  
Al Metallization ◽  
Tio2 Rutile

ABSTRACTThe electronic properties of TiO2 surfaces are of interest to further understanding of grain boundary effects in TiO2 and ZnO based varistor devices. Schottky barriers have been fabricated by Au or Al metallization on Nb doped TiO2-rutile [001] single crystal surfaces. Surface conditions included the presence or absence of either mechanical polishing induced surface defects and/or adsorbed oxygen. I­V measurements on Au samples indicate that surface defects yield ohmic behavior, but the defects may be electrically compensated by adsorbed oxygen to give non-ohmic I­V curves. All Al junctions show ohmic behavior which is interpreted in terms of reaction with surface oxygen. These results explain the necessity of firing varistor materials in an oxidizing atmosphere and suggest that the role of additives in these materials is to stabilize the oxygen concentration at the grain boundaries.

Role of dangling bonds at Schottky barriers and semiconductor heterojunctions

1987 ◽  
Vol 36 (2) ◽  
pp. 1336-1339 ◽  
Author(s):  
I. Lefebvre ◽  
M. Lannoo ◽  
C. Priester ◽  
G. Allan ◽  
C. Delerue
Keyword(s):  
Schottky Barriers ◽  
Dangling Bonds ◽  
Semiconductor Heterojunctions
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