Role of dangling bonds at Schottky barriers and semiconductor heterojunctions

1987 ◽  
Vol 36 (2) ◽  
pp. 1336-1339 ◽  
Author(s):  
I. Lefebvre ◽  
M. Lannoo ◽  
C. Priester ◽  
G. Allan ◽  
C. Delerue
Keyword(s):  
Schottky Barriers ◽  
Dangling Bonds ◽  
Semiconductor Heterojunctions

Role of amphoteric defects in the formation of metal/GaAs Schottky barriers

1991 ◽  
Vol 58 (24) ◽  
pp. 2785-2787 ◽  
Author(s):  
T. Zhang ◽  
T. W. Sigmon
Keyword(s):  
Schottky Barriers

scholarly journals The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

2015 ◽  
Vol 217 ◽  
pp. 43-46 ◽  
Author(s):  
Tzu-Liang Chan ◽  
Jaime Souto-Casares ◽  
James R. Chelikowsky ◽  
Kai-Ming Ho ◽  
Cai-Zhuang Wang ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Schottky Barriers

Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application

2015 ◽  
Vol 242 ◽  
pp. 51-60 ◽  
Author(s):  
Meng Tao
Keyword(s):  
Transition Metal ◽  
Schottky Barrier Height ◽  
New Records ◽  
Transition Metal Dichalcogenides ◽  
Surface States ◽  
Atomic Layer ◽  
Schottky Barriers ◽  
Photovoltaic Devices ◽  
Dangling Bonds ◽  
Metal Dichalcogenides

Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si (100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si (100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si (100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si (100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si (100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si (100) is suppressed up to 500 °C, and the thermally-stable record Schottky barriers enable their applications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si (100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.

Theoretical Models of Schottky Barriers

1981 ◽  
Vol 10 ◽  
Author(s):  
M. Schluter
Keyword(s):  
Theoretical Models ◽  
Interface States ◽  
Schottky Barriers ◽  
Quantum Mechanical ◽  
Barrier Heights

ABSTRACTA review is presented in which existing theories of the formation of Schottky barriers are analyzed. The list includes macroscopic dielectric approaches and various microscopic quantum mechanical treatments. The central role of interface states and their different physical origins are assessed. Simple concepts, able to predict general trends in barrier heights, are examined along with detailed microscopic theories applied to individual contacts.

Ab Initio Simulations of the Nucleation of Single-Walled Carbon Nanotubes

2007 ◽  
Vol 121-123 ◽  
pp. 1037-1040 ◽  
Author(s):  
L. Li ◽  
S. Reich ◽  
J. Robertson
Keyword(s):  
Strain Energy ◽  
Single Walled Carbon Nanotubes ◽  
Dangling Bonds ◽  
Bond Energies ◽  
Ab Initio Simulations ◽  
Nucleation Stage ◽  
Carbon Carbon Bonds ◽  
Metallic Catalyst ◽  
Walled Carbon Nanotubes

We investigated the nucleation of SWNTs and the role of metallic catalyst using firstprinciples calculations. To avoid dangling bonds a closed cap forms on a metal surface. 6 pentagonal rings are introduced into the cap, which reduces the strain energy. A unique tube chirality then grows from the cap, which is controlled by the metal lattice at the nucleation stage. We found that chirality of nanotubes affects the bond energies, including dangling bonds, carbon-carbon bonds & carbonmetal bonds.

Scanning Tunneling Microscopy Studies of the Initial Stages of Thin Film Growth: the Role of the Surface Dangling Bonds

1987 ◽  
Vol 105 ◽  
Author(s):  
Ph. Avouris ◽  
R. Wolkow ◽  
F. Bozso ◽  
R. J. Hamers
Keyword(s):  
Film Growth ◽  
Thin Film Growth ◽  
Scanning Tunneling ◽  
Reaction Products ◽  
Dangling Bonds ◽  
Surface Chemical Reaction ◽  
Tunneling Microscopy ◽  
Reacting Systems ◽  
First Time

AbstractWe present STM and photoemission studies of the reactions of Si(100)-(2×1) and Si(111)–(7×7) with NH3. STM allows us to image the occupied and unoccupied states of the reacting systems and to obtain electronic spectra with atomic lateral resolution. Thus, for the first time, a surface chemical reaction can be probed at the atomic level. We find that both surfaces are reactive even at 100K. However, both the extent of the reaction and the reaction products at 300K are different on the two surfaces. STM also shows that while surface dangling bonds are essential for low-temperature reactivity, not all triplycoordinated Si sites are chemically equivalent. On the 7×7 surface the rest-atoms are more reactive than center-adatoms which, in turn, are more reactive than corner-adatoms.

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