scholarly journals Schottky barriers on compound semiconductors: The role of the anion

1976 ◽  
Vol 13 (4) ◽  
pp. 802-806 ◽  
Author(s):  
J. O. McCaldin ◽  
T. C. McGill ◽  
C. A. Mead
Keyword(s):  
Compound Semiconductors ◽  
Schottky Barriers

Role of amphoteric defects in the formation of metal/GaAs Schottky barriers

1991 ◽  
Vol 58 (24) ◽  
pp. 2785-2787 ◽  
Author(s):  
T. Zhang ◽  
T. W. Sigmon
Keyword(s):  
Schottky Barriers

scholarly journals The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

2015 ◽  
Vol 217 ◽  
pp. 43-46 ◽  
Author(s):  
Tzu-Liang Chan ◽  
Jaime Souto-Casares ◽  
James R. Chelikowsky ◽  
Kai-Ming Ho ◽  
Cai-Zhuang Wang ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Schottky Barriers

Theoretical Models of Schottky Barriers

1981 ◽  
Vol 10 ◽  
Author(s):  
M. Schluter
Keyword(s):  
Theoretical Models ◽  
Interface States ◽  
Schottky Barriers ◽  
Quantum Mechanical ◽  
Barrier Heights

ABSTRACTA review is presented in which existing theories of the formation of Schottky barriers are analyzed. The list includes macroscopic dielectric approaches and various microscopic quantum mechanical treatments. The central role of interface states and their different physical origins are assessed. Simple concepts, able to predict general trends in barrier heights, are examined along with detailed microscopic theories applied to individual contacts.

Role of hydrogen in III N V compound semiconductors

2002 ◽  
Vol 17 (8) ◽  
pp. 797-802 ◽  
Author(s):  
A Polimeni ◽  
G Baldassarri H ger von H gersthal ◽  
M Bissiri ◽  
M Capizzi ◽  
A Frova ◽  
...  
Keyword(s):  
Compound Semiconductors

The role of step kinetics in MBE of compound semiconductors

1991 ◽  
Vol 115 (1-4) ◽  
pp. 398-405 ◽  
Author(s):  
T. Nishinaga ◽  
T. Suzuki
Keyword(s):  
Compound Semiconductors
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