Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing

1990 ◽  
Vol 57 (27) ◽  
pp. 2904-2906 ◽  
Author(s):  
T. A. Richard ◽  
J. S. Major ◽  
F. A. Kish ◽  
N. Holonyak ◽  
S. C. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Quantum Well Lasers ◽  
Open Tube ◽  
Buried Heterostructure ◽  
Low Threshold

Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering

1988 ◽  
Vol 53 (16) ◽  
pp. 1459-1461 ◽  
Author(s):  
J. E. Epler ◽  
R. L. Thornton ◽  
W. J. Mosby ◽  
T. L. Paoli
Keyword(s):  
Quantum Well ◽  
Excimer Laser ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

1988 ◽  
Vol 52 (17) ◽  
pp. 1371-1373 ◽  
Author(s):  
J. E. Epler ◽  
R. L. Thornton ◽  
T. L. Paoli
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers

1985 ◽  
Vol 58 (12) ◽  
pp. 4515-4520 ◽  
Author(s):  
D. G. Deppe ◽  
K. C. Hsieh ◽  
N. Holonyak ◽  
R. D. Burnham ◽  
R. L. Thornton
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Effects of rapid thermal annealing on lasing properties of InGaAs/GaAs/GaInP quantum well lasers

1992 ◽  
Vol 72 (8) ◽  
pp. 3788-3791 ◽  
Author(s):  
G. Zhang ◽  
J. Näppi ◽  
A. Ovtchinnikov ◽  
H. Asonen ◽  
M. Pessa
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Quantum Well Lasers

Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)

1989 ◽  
Vol 54 (10) ◽  
pp. 913-915 ◽  
Author(s):  
J. S. Major ◽  
L. J. Guido ◽  
K. C. Hsieh ◽  
N. Holonyak ◽  
W. Stutius ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
Low Threshold

Influence of Rapid Thermal Annealing on the Properties of Strained GaInAs Quantum Well Lasers

1993 ◽  
Vol 32 (Part 1, No. 3A) ◽  
pp. 1056-1059 ◽  
Author(s):  
Philippe Maurel ◽  
Julien Nagle ◽  
Jean Pierre Hirtz
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Quantum Well Lasers

Si impurity‐induced layer disordering of AlxGa1−x‐GaAs quantum‐well heterostructures by As‐free open‐tube rapid thermal annealing

1990 ◽  
Vol 68 (12) ◽  
pp. 6199-6206 ◽  
Author(s):  
J. S. Major ◽  
F. A. Kish ◽  
T. A. Richard ◽  
A. R. Sugg ◽  
J. E. Baker ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Open Tube

Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy

1990 ◽  
Vol 57 (27) ◽  
pp. 2873-2875 ◽  
Author(s):  
Zh. I. Alferov ◽  
V. M. Andreyev ◽  
A. Z. Mereutza ◽  
A. V. Syrbu ◽  
V. P. Yakovlev
Keyword(s):  
Liquid Phase ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold
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