Fabrication and characterization of quantum well wires grown on corrugated GaAs substrates by molecular beam epitaxy

1990 ◽  
Vol 56 (2) ◽  
pp. 154-156 ◽  
Author(s):  
Keisuke Kojima ◽  
Kazumasa Mitsunaga ◽  
Kazuo Kyuma
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Quantum Well Wires ◽  
Fabrication And Characterization

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

1992 ◽  
Vol 60 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
Annette S. Glaeser ◽  
James L. Merz ◽  
Robert E. Nahory ◽  
Maria C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Fabrication And Characterization

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 812-816 ◽  
Author(s):  
Yoshikatsu Ichimura ◽  
Katsumi Kishino ◽  
Mitsunari Satake ◽  
Masaru Kuramoto ◽  
Atsushi Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Compound System ◽  
Gaas Substrates

Step Profile Fluctuations in Quantum-Well Wire Growth on Vicinal Surfaces

1989 ◽  
Vol 160 ◽  
Author(s):  
K.J. Hugill ◽  
T. Shitara ◽  
S. Clarke ◽  
D.D. Vvedensky ◽  
B.A. Joyce
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Solid Model ◽  
Optimum Regime ◽  
Vicinal Surfaces ◽  
Quantum Well Wire ◽  
Quantum Well Wires ◽  
Edge Stability

AbstractMolecular-beam epitaxy of quantum-well wires on vicinal surfaces is studied by application of Monte Carlo simulations of a solid-on-solid model. Characterization of simulated quantum-well wires indicates an optimum regime within which the quality of the quantum-well wire is maximized. The model is extended to include observed anisotropies in GaAs growth on vicinal surfaces, and the conclusion is reached that better quality quantum-well wires may be grown on substrates misoriented from the (001) towards [110], rather than [110], due to relative step edge stability on the two misoriented surfaces.

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