Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 812-816 ◽  
Author(s):  
Yoshikatsu Ichimura ◽  
Katsumi Kishino ◽  
Mitsunari Satake ◽  
Masaru Kuramoto ◽  
Atsushi Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Compound System ◽  
Gaas Substrates

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Molecular Beam Epitaxy and Characterization of Layered In2Se3Films Grown on Slightly Misoriented (001)GaAs Substrates

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 668-673 ◽  
Author(s):  
Tomohiko Ohtsuka ◽  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates

Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates

2007 ◽  
Vol 301-302 ◽  
pp. 552-555 ◽  
Author(s):  
J. Ibáñez ◽  
M. Henini ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Schmidbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Gaas Substrates

Optical Characterization of Heavily Sn-Doped GaAs1-xSbxEpilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates

2005 ◽  
Vol 44 (1B) ◽  
pp. 705-708 ◽  
Author(s):  
Fumio Nishino ◽  
Tatsuya Takei ◽  
Ariyuki Kato ◽  
Yoshio Jinbo ◽  
Naotaka Uchitomi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Gaas Substrates
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