Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

1992 ◽  
Vol 60 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
Annette S. Glaeser ◽  
James L. Merz ◽  
Robert E. Nahory ◽  
Maria C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Fabrication And Characterization

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

scholarly journals The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 102710-102716
Author(s):  
Jing Zhang ◽  
Hongliang Lv ◽  
Yifeng Song ◽  
Haiqiao Ni ◽  
Zhichuan Niu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Fabrication And Characterization
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