Magnetoresistance effect of InAs quantum well structure grown on GaAs substrates by molecular beam epitaxy

2002 ◽  
Author(s):  
T. Yoshida ◽  
A. Okamoto ◽  
S. Muramatsu ◽  
N. Kuze ◽  
I. Shibasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Magnetoresistance Effect ◽  
Quantum Well Structure ◽  
Gaas Substrates

Correlation Between the Quantized Energies and the Photovoltaic Spectra for a GaAs/A1GaAs Quantum Well Structure

1996 ◽  
Vol 426 ◽  
Author(s):  
O. L. Russo ◽  
V. Rehn ◽  
T. W. Nee ◽  
K. A. Dumas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Energy Range ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structure ◽  
Adjacent Line

AbstractWe have measured the photovoltaic spectra at 300K for a PIN GaAs/AlGaAs structure containing five coupled wells (50A/28A) grown by molecular beam epitaxy (MBE). The spectra were obtained in the energy range from 1.40 eV to 1.60 eV. This is the region in which optical transitions between the sub-band valence and conduction states are possible. Five direct optical transitions are allowed for this structure. These transitions are normally difficult to measure at room temperature because of broadening, nevertheless, some of the allowed transitions were observed from the photovoltaic spectra and agreed with calculations. We have previously shown that measurements made using electroreflectance (ER) agree with these results. However, with ER, three possible transitions were observed but only one with certainty, possibly because of interference caused by adjacent line spectra interaction. This interference appears to be less pronounced in the photovoltaic spectra, which aids in the identification of transitions.

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