Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy

Hiroyuki Hirayama; Masayuki Hiroi; Kazuhisa Koyama; Toru Tatsumi

doi:10.1063/1.102863

Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.102863 ◽

1990 ◽

Vol 56 (26) ◽

pp. 2645-2647 ◽

Cited By ~ 21

Author(s):

Hiroyuki Hirayama ◽

Masayuki Hiroi ◽

Kazuhisa Koyama ◽

Toru Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Gas Source ◽

Transistor Fabrication

Download Full-text

Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.46917 ◽

1990 ◽

Vol 11 (1) ◽

pp. 18-20 ◽

Cited By ~ 9

Author(s):

H. Hirayama ◽

K. Koyama ◽

T. Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Selective Epitaxial Growth ◽

Gas Source ◽

Transistor Fabrication

Download Full-text

Growth of carbon doping Ga[sub 0.47]In[sub 0.53]As using CBr[sub 4] by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590720 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1185 ◽

Cited By ~ 6

Author(s):

H. C. Kuo ◽

D. Ahmari ◽

B. G. Moser ◽

J. Mu ◽

M. Hattendorf ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carbon Doping ◽

Gas Source

Download Full-text

In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.09.057 ◽

2005 ◽

Vol 273 (3-4) ◽

pp. 381-385 ◽

Cited By ~ 2

Author(s):

F. Gao ◽

D.D. Huang ◽

J.P. Li ◽

C. Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Doping Control ◽

Heterojunction Bipolar Transistor ◽

Gas Source

Download Full-text

High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.145025 ◽

1992 ◽

Vol 13 (4) ◽

pp. 214-216 ◽

Cited By ~ 61

Author(s):

S.S. Lu ◽

C.C. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Gas Source

Download Full-text

The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00857-5 ◽

2000 ◽

Vol 220 (4) ◽

pp. 457-460

Author(s):

F Gao ◽

D.D Huang ◽

J.P Li ◽

Y.X Lin ◽

M.Y Kong ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Gas Source

Download Full-text

Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

Download Full-text

Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90440-5 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 361-365 ◽

Cited By ~ 46

Author(s):

H. Okumura ◽

S. Misawa ◽

T. Okahisa ◽

S. Yoshida

Keyword(s):

Molecular Beam Epitaxy ◽

Nitrogen Source ◽

Epitaxial Growth ◽

Molecular Beam ◽

Microwave Plasma ◽

Gas Source

Download Full-text

InGaAs/InP heterojunction bipolar transistor grown by all-solid source molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19951015 ◽

1995 ◽

Vol 31 (17) ◽

pp. 1514-1515 ◽

Cited By ~ 7

Author(s):

B. Willén ◽

M. Toivonen ◽

H. Asonen

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

Download Full-text

An In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs substrate by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584764 ◽

1989 ◽

Vol 7 (2) ◽

pp. 415 ◽

Cited By ~ 1

Author(s):

T. Won

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

Download Full-text

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Cited By ~ 7

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

High Electron Mobility Transistor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text