Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

H. Hirayama; K. Koyama; T. Tatsumi

doi:10.1109/55.46917

Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.46917 ◽

1990 ◽

Vol 11 (1) ◽

pp. 18-20 ◽

Cited By ~ 9

Author(s):

H. Hirayama ◽

K. Koyama ◽

T. Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Selective Epitaxial Growth ◽

Gas Source ◽

Transistor Fabrication

Download Full-text

Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.102863 ◽

1990 ◽

Vol 56 (26) ◽

pp. 2645-2647 ◽

Cited By ~ 21

Author(s):

Hiroyuki Hirayama ◽

Masayuki Hiroi ◽

Kazuhisa Koyama ◽

Toru Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Gas Source ◽

Transistor Fabrication

Download Full-text

Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

Download Full-text

Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1−xGex/Si(100) grown by gas-source molecular beam epitaxy

Thin Solid Films ◽

10.1016/s0040-6090(99)01114-1 ◽

2000 ◽

Vol 365 (1) ◽

pp. 147-150 ◽

Cited By ~ 2

Author(s):

Greg D. U'Ren ◽

Mark S Goorsky ◽

Kang L Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Misfit Strain ◽

Selective Epitaxial Growth ◽

Gas Source

Download Full-text

Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588866 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2381 ◽

Cited By ~ 30

Author(s):

Qi Xiang

Keyword(s):

Molecular Beam Epitaxy ◽

Mass Transport ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth ◽

Gas Source

Download Full-text

Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90440-5 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 361-365 ◽

Cited By ~ 46

Author(s):

H. Okumura ◽

S. Misawa ◽

T. Okahisa ◽

S. Yoshida

Keyword(s):

Molecular Beam Epitaxy ◽

Nitrogen Source ◽

Epitaxial Growth ◽

Molecular Beam ◽

Microwave Plasma ◽

Gas Source

Download Full-text

Growth of carbon doping Ga[sub 0.47]In[sub 0.53]As using CBr[sub 4] by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590720 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1185 ◽

Cited By ~ 6

Author(s):

H. C. Kuo ◽

D. Ahmari ◽

B. G. Moser ◽

J. Mu ◽

M. Hattendorf ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carbon Doping ◽

Gas Source

Download Full-text

In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.09.057 ◽

2005 ◽

Vol 273 (3-4) ◽

pp. 381-385 ◽

Cited By ~ 2

Author(s):

F. Gao ◽

D.D. Huang ◽

J.P. Li ◽

C. Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Doping Control ◽

Heterojunction Bipolar Transistor ◽

Gas Source

Download Full-text

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.107430 ◽

1992 ◽

Vol 60 (7) ◽

pp. 824-826 ◽

Cited By ~ 30

Author(s):

Tatsuo Yoshinobu ◽

Hideaki Mitsui ◽

Iwao Izumikawa ◽

Takashi Fuyuki ◽

Hiroyuki Matsunami

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Crystalline ◽

Gas Source ◽

Lattice Matched

Download Full-text

Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.106234 ◽

1991 ◽

Vol 59 (14) ◽

pp. 1735-1736 ◽

Cited By ~ 22

Author(s):

K. Aketagawa ◽

T. Tatsumi ◽

J. Sakai

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

Download Full-text

Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1641 ◽

1996 ◽

Vol 35 (Part 1, No. 3) ◽

pp. 1641-1647 ◽

Cited By ~ 33

Author(s):

Satoru Tanaka ◽

R. Scott Kern ◽

James Bentley ◽

Robert F. Davis

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Epitaxial Growth ◽

Molecular Beam ◽

Defect Formation ◽

Gas Source

Download Full-text