Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (11) ◽  
pp. 1539-1546 ◽  
Author(s):  
J. W. Huang ◽  
J. M. Ryan ◽  
K. L. Bray ◽  
T. F. Kuech
Keyword(s):  
Gallium Arsenide ◽  
Indium Phosphide ◽  
Indium Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Oxygen Incorporation ◽  
Indium Gallium

Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping

1995 ◽  
Vol 378 ◽  
Author(s):  
J. W. Huang ◽  
T. F. Kuech
Keyword(s):  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Valence Band ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Oxygen Doping ◽  
Constant Energy ◽  
Indium Gallium

AbstractIntentional defect incorporation in metalorganic vapor phase epitaxy (MOVPE) InxGai-xAs was achieved by controlled oxygen doping using diethylaluminum ethoxide (DEALO). DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGai-xAs:Si with 0≤x≤ 0.25. DLTS analysis on a series of InxGa1-xAs:Si:O samples with 0≤x≤ 0.18 showed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. The characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band.

Initial stages of gallium arsenide metalorganic vapor phase epitaxy

2016 ◽  
Vol 52 (10) ◽  
pp. 985-989 ◽  
Author(s):  
P. B. Boldyrevskii ◽  
D. O. Filatov ◽  
I. A. Kazantseva ◽  
D. S. Smotrin ◽  
M. V. Revin
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
D. C. Law ◽  
Y. Sun ◽  
C. H. Li ◽  
S. B. Visbeck ◽  
G. Chen ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 214-215 ◽  
Author(s):  
Douglas F. Foster ◽  
Christopher Glidewell ◽  
David J. Cole‐Hamilton
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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