Optical determination of the electron effective mass of strain compensated In0.4Ga0.6As0.995N0.005∕GaAs single quantum well

2006 ◽  
Vol 89 (17) ◽  
pp. 171112 ◽  
Author(s):  
LiFang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
J. Y. Yeh ◽  
L. J. Mawst ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Single Quantum ◽  
Electron Effective Mass ◽  
Single Quantum Well ◽  
Optical Determination

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

2009 ◽  
Vol 94 (24) ◽  
pp. 241906 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
H. Zhong ◽  
A. Tyagi ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Well ◽  
Polarization Field ◽  
Single Quantum ◽  
Single Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Photoluminescence determination of well depth ofGa0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum well

1985 ◽  
Vol 32 (6) ◽  
pp. 3806-3810 ◽  
Author(s):  
K. Shum ◽  
P. P. Ho ◽  
R. R. Alfano ◽  
D. F. Welch ◽  
G. W. Wicks ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Well Depth

Spin-Splitting and Effective Mass of the 2-Dimensional Electron Gas in an Al0.6Ga0.4Sb/InAs Single Quantum Well

1991 ◽  
Vol 240 ◽  
Author(s):  
M. O. Manasreh ◽  
Godfrey Gumbs ◽  
C. Zhang ◽  
I. Lo ◽  
C. A. Bozada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Electron Gas ◽  
Oscillatory Behavior ◽  
Spin Splitting ◽  
Single Quantum ◽  
Dimensional Electron ◽  
Single Quantum Well ◽  
Average Value ◽  
Dimensional Electron Gas

ABSTRACTThe 2-dimensional electron gas (2DEG) in an Al0.6Ga0.4Sb/InAs single quantum well (SQW) is studied using cyclotron resonance (CR) and Shubnikov - de Haas (SdH) techniques. SdH results show spin-splitting in Landau levels at magnetic field strength (B) as low as 1.5T. The effective mass (m*) of the 2DEG was obtained from the peak positions of the CR transmission spectra. The results exhibit oscillatory behavior as a function of B. The m* value extracted from die temperature dependence of the SdH oscillations is in good agreement with the average value of m* obtained from CR measurements. The effective mass is calculated as a function of B using an electron self-energy model based on the Hartree-Fock approximation. The calculated m* values also show oscillatory behavior similar to that of the measured CR m*. Both experiment and theory show that m* maxima are shifted from the integral values (both odd and even) of the filling factors.

Optical determination of the heavy‐hole effective mass and exciton binding energy for a Si0.83Ge0.17/Si quantum well

1995 ◽  
Vol 78 (10) ◽  
pp. 6327-6329 ◽  
Author(s):  
Hosun Lee ◽  
E. D. Jones ◽  
S. R. Kurtz ◽  
T. Schmiedel ◽  
D. C. Houghton ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Heavy Hole ◽  
Exciton Binding Energy ◽  
Hole Effective Mass ◽  
Optical Determination

Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs

1989 ◽  
Vol 55 (14) ◽  
pp. 1427-1429 ◽  
Author(s):  
E. M. Clausen ◽  
H. G. Craighead ◽  
J. M. Worlock ◽  
J. P. Harbison ◽  
L. M. Schiavone ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Layer ◽  
Quantum Well ◽  
Layer Thickness ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Surface Layer Thickness
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