Effect of cladding layer thickness on the performance of GaAs-AlGaAs graded index separate confinement heterostructure single quantum-well lasers

1990 ◽  
Vol 26 (9) ◽  
pp. 1476-1480 ◽  
Author(s):  
A. Behfar-Rad ◽  
J.R. Shealy ◽  
S.R. Chinn ◽  
S.S. Wong
Keyword(s):  
Quantum Well ◽  
Layer Thickness ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Graded Index ◽  
Cladding Layer

Temperature‐dependent factors contributing toT0in graded‐index separate‐confinement‐heterostructure single quantum well lasers

1987 ◽  
Vol 50 (20) ◽  
pp. 1403-1405 ◽  
Author(s):  
M. M. Leopold ◽  
A. P. Specht ◽  
C. A. Zmudzinski ◽  
M. E. Givens ◽  
J. J. Coleman
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Single Quantum Well ◽  
Graded Index

High‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1492-1494 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Robert J. Lang ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Authi A. Narayanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Graded Index ◽  
Si Substrates ◽  
Low Threshold
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