Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

B. T. Cunningham; M. A. Haase; M. J. McCollum; J. E. Baker; G. E. Stillman

doi:10.1063/1.101237

Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

Applied Physics Letters ◽

10.1063/1.101237 ◽

1989 ◽

Vol 54 (19) ◽

pp. 1905-1907 ◽

Cited By ~ 102

Author(s):

B. T. Cunningham ◽

M. A. Haase ◽

M. J. McCollum ◽

J. E. Baker ◽

G. E. Stillman

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Heavy Carbon ◽

Metalorganic Chemical

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Using Carbon Tetrachloride for Carbon Doping $\bf Al_{\ninmbi X}Ga_{1-{\ninmbi X}}As$ Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.3504 ◽

1995 ◽

Vol 34 (Part 1, No. 7A) ◽

pp. 3504-3505 ◽

Cited By ~ 7

Author(s):

Yoshitaka Kohama ◽

Chikara Amano ◽

Yoshitaka Ohiso ◽

Takashi Kurokawa

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Metalorganic Chemical

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Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio

Applied Physics Letters ◽

10.1063/1.103181 ◽

1990 ◽

Vol 56 (13) ◽

pp. 1248-1250 ◽

Cited By ~ 39

Author(s):

Mitsuhiro Kushibe ◽

Kazuhiro Eguchi ◽

Masahisa Funamizu ◽

Yasuo Ohba

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Heavy Carbon ◽

Metalorganic Chemical

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Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.103321 ◽

1990 ◽

Vol 56 (9) ◽

pp. 836-838 ◽

Cited By ~ 28

Author(s):

B. T. Cunningham ◽

J. E. Baker ◽

G. E. Stillman

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical

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Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source

Applied Physics Letters ◽

10.1063/1.102785 ◽

1990 ◽

Vol 56 (4) ◽

pp. 361-363 ◽

Cited By ~ 45

Author(s):

B. T. Cunningham ◽

G. E. Stillman ◽

G. S. Jackson

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carbon Doped ◽

Dopant Source ◽

Metalorganic Chemical

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Carbon doping and growth rate reduction by CCl4during metalorganic chemical‐vapor deposition of GaAs

Journal of Applied Physics ◽

10.1063/1.357219 ◽

1994 ◽

Vol 76 (9) ◽

pp. 5079-5084 ◽

Cited By ~ 26

Author(s):

Jeong‐Seok Lee ◽

In Kim ◽

Byung‐Doo Choe ◽

Weon Guk Jeong

Keyword(s):

Growth Rate ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Rate Reduction ◽

Growth Rate Reduction ◽

Metalorganic Chemical

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Carbon doping in InAlAs grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00899-8 ◽

1997 ◽

Vol 173 (3-4) ◽

pp. 315-320 ◽

Cited By ~ 12

Author(s):

Hiroshi Ito ◽

Haruki Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Metalorganic Chemical

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Carbon doping in GaAs using trimethylarsine by metalorganic chemical vapor deposition with high-speed rotating susceptor

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00861-2 ◽

1995 ◽

Vol 147 (3-4) ◽

pp. 256-263 ◽

Cited By ~ 12

Author(s):

Noriyuki Watanabe ◽

Hiroshi Ito ◽

Tadao Ishibashi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Speed ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Metalorganic Chemical

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Low Doped P-Type AlGaAs Buffer Layers Grown by Metalorganic Chemical Vapor Deposition Using Intrinsic Carbon Doping Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l363 ◽

1998 ◽

Vol 37 (Part 2, No. 4A) ◽

pp. L363-L365 ◽

Cited By ~ 4

Author(s):

Seung June Choi ◽

Jin Ho Seo ◽

Jae Hak Lee ◽

Kwang Seok Seo

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Buffer Layers ◽

Carbon Doping ◽

P Type ◽

Metalorganic Chemical

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Carbon doping and etching in GaxIn1−xAsyP1−y on GaAs substrates using CBr4 by metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-999-0196-6 ◽

1999 ◽

Vol 28 (1) ◽

pp. 63-68 ◽

Cited By ~ 17

Author(s):

Kouta Tateno ◽

Chikara Amano

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Gaas Substrates ◽

Metalorganic Chemical

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Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00737-3 ◽

1997 ◽

Vol 172 (1-2) ◽

pp. 5-12 ◽

Cited By ~ 32

Author(s):

Kouta Tateno ◽

Yoshitaka Kohama ◽

Chikara Amano

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Metalorganic Chemical

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