Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source

B. T. Cunningham; G. E. Stillman; G. S. Jackson

doi:10.1063/1.102785

Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source

Applied Physics Letters ◽

10.1063/1.102785 ◽

1990 ◽

Vol 56 (4) ◽

pp. 361-363 ◽

Cited By ~ 45

Author(s):

B. T. Cunningham ◽

G. E. Stillman ◽

G. S. Jackson

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carbon Doped ◽

Dopant Source ◽

Metalorganic Chemical

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DC and High Frequency Characterization of Metalorganic Chemical Vapor Deposition (MOCVD) Grown InP/InGaAs PNP Heterojunction Bipolar Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1143 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 1143-1149 ◽

Cited By ~ 1

Author(s):

Delong Cui ◽

Shawn S. H. Hsu ◽

Dimitris Pavlidis

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Frequency ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Metalorganic Chemical

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Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97385 ◽

1986 ◽

Vol 49 (19) ◽

pp. 1278-1280 ◽

Cited By ~ 14

Author(s):

K. Taira ◽

C. Takano ◽

H. Kawai ◽

M. Arai

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Metalorganic Chemical

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Comparison of DC and high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition

IEEE Transactions on Electron Devices ◽

10.1109/16.998577 ◽

2002 ◽

Vol 49 (5) ◽

pp. 725-732 ◽

Cited By ~ 2

Author(s):

Delong Cui ◽

D. Pavlidis ◽

S.S.H. Hsu ◽

A. Eisenbach

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Frequency ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doped ◽

High Frequency Performance ◽

Metalorganic Chemical

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Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3343 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3343-3349 ◽

Cited By ~ 17

Author(s):

Hiroshi Ito ◽

Shoji Yamahata ◽

Naoteru Shigekawa ◽

Kenji Kurishima ◽

Yutaka Matsuoka

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

High Speed ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Chemical

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Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr4

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.6562 ◽

1996 ◽

Vol 35 (Part 1, No. 12B) ◽

pp. 6562-6565 ◽

Cited By ~ 4

Author(s):

Chang-Sik Son ◽

Seong-Il Kim ◽

Byung-Don Min ◽

Yong Kim ◽

Eun Kyu Kim ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doped ◽

Metalorganic Chemical

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Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

Applied Physics Letters ◽

10.1063/1.120305 ◽

1997 ◽

Vol 71 (22) ◽

pp. 3248-3250 ◽

Cited By ~ 14

Author(s):

C. C. Hsu ◽

Y. F. Yang ◽

H. J. Ou ◽

E. S. Yang ◽

H. B. Lo

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carrier Gas ◽

Carbon Doped ◽

Metalorganic Chemical

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Using Carbon Tetrachloride for Carbon Doping $\bf Al_{\ninmbi X}Ga_{1-{\ninmbi X}}As$ Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.3504 ◽

1995 ◽

Vol 34 (Part 1, No. 7A) ◽

pp. 3504-3505 ◽

Cited By ~ 7

Author(s):

Yoshitaka Kohama ◽

Chikara Amano ◽

Yoshitaka Ohiso ◽

Takashi Kurokawa

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Doping ◽

Metalorganic Chemical

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Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.103321 ◽

1990 ◽

Vol 56 (9) ◽

pp. 836-838 ◽

Cited By ~ 28

Author(s):

B. T. Cunningham ◽

J. E. Baker ◽

G. E. Stillman

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Tetrachloride ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Metalorganic Chemical

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Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.351776 ◽

1992 ◽

Vol 72 (3) ◽

pp. 981-987 ◽

Cited By ~ 45

Author(s):

S. A. Stockman ◽

G. E. Höfler ◽

J. N. Baillargeon ◽

K. C. Hsieh ◽

K. Y. Cheng ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Carbon Doped ◽

Metalorganic Molecular Beam Epitaxy ◽

Metalorganic Chemical

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Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition

10.1117/12.319646 ◽

1998 ◽

Cited By ~ 1

Author(s):

Tao Yin ◽

Peng Lian ◽

ZunTu Xu ◽

Changhua Chen ◽

Hongdong Zhao ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Carbon Doped ◽

Strained Quantum Well ◽

Metalorganic Chemical

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