Novel GaAs voltage‐controllable negative differential resistance transistor prepared by molecular beam epitaxy

1989 ◽  
Vol 54 (12) ◽  
pp. 1157-1159 ◽  
Author(s):  
K. F. Yarn ◽  
Y. H. Wang ◽  
C. Y. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Differential Resistance

Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Space Charge Region ◽  
Molecular Beam ◽  
Differential Resistance ◽  
Anodic Oxide ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Wide Range ◽  
Minority Carriers ◽  
Mis Structures

AbstractThe paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg1−xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO2/Si3N4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

scholarly journals GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

2001 ◽  
Vol 24 (1) ◽  
pp. 1-11
Author(s):  
M. R. Lef ◽  
K. F. Yarn ◽  
C. C. Chen ◽  
W. R. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wave Length ◽  
Differential Resistance ◽  
Current Gain ◽  
Switching Device ◽  
Multiplication Process ◽  
Current Voltage ◽  
New Type ◽  
Optoelectronic Switching

A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional current-voltage (I–V) characteristics exhibit a new type of NDR caused by an avalanche multiplication process in reverse biased base-collector region and barrier redistribution. Under a base current injection with respect to the cathode, the device exhibits a conventional transistor with a current gain of 1.2 at room temperature. The experimentally electrical results can be easily understood by an equivalent circuit. In addition, a new optoelectronic switching device is also proposed which may have the potential for bidirectional wave length emission.

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