Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

2012 ◽  
Vol 100 (25) ◽  
pp. 252105 ◽  
Author(s):  
D. Li ◽  
L. Tang ◽  
C. Edmunds ◽  
J. Shao ◽  
G. Gardner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Free Standing ◽  
Tunneling Diodes

Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 2, No. 8B) ◽  
pp. L920-L922 ◽  
Author(s):  
Masafumi Tsutsui ◽  
Masahiro Watanabe ◽  
Masahiro Asada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

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