Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica

1988 ◽  
Vol 53 (7) ◽  
pp. 595-597 ◽  
Author(s):  
D. P. Norton ◽  
P. K. Ajmera
Keyword(s):  
Vapor Deposition ◽  
Fused Silica ◽  
Photochemical Vapor Deposition

Photochemical vapor deposition of silicon oxynitride films by deuterium lamp

1989 ◽  
Vol 4 (4) ◽  
pp. 882-885 ◽  
Author(s):  
Junji Watanabe ◽  
Mitsugu Hanabusa
Keyword(s):  
Flow Rate ◽  
Vapor Deposition ◽  
Fused Silica ◽  
Silicon Oxynitride ◽  
Light Spectrum ◽  
Pass Filter ◽  
Excitation Light ◽  
Low Pass Filter ◽  
Photochemical Vapor Deposition ◽  
Deuterium Lamp

Silicon oxynitride films have been grown by a photochemical vapor deposition process utilizing VUV light of a deuterium lamp from a gas mixture of Si2H6, NH3, and NO2 at the substrate temperature of about 330 °C. The deposition rate of the film varied with NO2 flow rate and also with the excitation light spectrum which was varied by a low-pass filter of a synthetic or fused silica plate. The composition of the films was sensitive to the NO2 flow rate which was smaller than that of NH3 by a factor of 103.

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

Photochemical vapor deposition of titaniumdiboride

1990 ◽  
Vol 46 (1-4) ◽  
pp. 215-219 ◽  
Author(s):  
J. Elders ◽  
D. Bebelaar ◽  
J.D.W. van Voorst
Keyword(s):  
Vapor Deposition ◽  
Photochemical Vapor Deposition

Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition

1988 ◽  
Vol 52 (20) ◽  
pp. 1710-1712 ◽  
Author(s):  
V. Tavitian ◽  
C. J. Kiely ◽  
D. B. Geohegan ◽  
J. G. Eden
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition

High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition

1991 ◽  
Vol 30 (Part 1, No. 8) ◽  
pp. 1635-1640 ◽  
Author(s):  
Katsuhiko Higuchi ◽  
Katsuya Tabuchi ◽  
Koeng Su Lim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Photochemical Vapor Deposition

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Direct Band Gap ◽  
Cuins2 Thin Films ◽  
Potential Applications ◽  
Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2with High Haze Factors

2002 ◽  
Vol 41 (Part 1, No. 11A) ◽  
pp. 6417-6420 ◽  
Author(s):  
Ying Zhao ◽  
Shinsuke Miyajima ◽  
Yoshinori Ide ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition
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