Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

scholarly journals Pulse source injection molecular beam epitaxy and characterization of nano-scale thin GaN layers on Si substrates

2006 ◽  
Vol 200 (10) ◽  
pp. 3230-3234 ◽  
Author(s):  
W. Tong ◽  
M. Harris ◽  
B.K. Wagner ◽  
J.W. Yu ◽  
H.C. Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Pulse Source ◽  
Si Substrates ◽  
Nano Scale

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 950-954 ◽  
Author(s):  
J. Zhang ◽  
X.M. Zhang ◽  
A. Matsumura ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source

Characterization of GaAs films grown on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 46 ◽  
pp. 896-897
Author(s):  
J.B. Posthill ◽  
J. Tarn ◽  
T.P. Humphreys ◽  
K. Das ◽  
J.J. Wortman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Ex Situ ◽  
Material System ◽  
Bulk Gaas ◽  
Si Substrates

Because of several potential applications and advantages afforded by the heteroepitaxial GaAs-on-Silicon material system, several groups world-wide are attempting to grow device-quality GaAs on Si substrates.eg.1 Both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) growth techniques have been widely utilized to achieve heteroepitaxial growth. However, certain fundamental materials and growth problems have thus far prevented any group from achieving heteroepitaxial GaAs of a quality similar to that obtainable from bulk GaAs crystals. A high density of threading dislocations, microtwins/stacking faults, antiphase domain boundaries (APBs) and microfissures can form under non-ideal conditions. These defects result, in part, from stresses generated due to the ∼4% lattice mismatch and the different coefficients of thermal expansion between GaAs and Si.2 Ex-situ characterization of this materials system is essential to assess the material quality and to provide direction for future growth experiments. This contribution describes the TEM characterization methodology that we employ to analyze our GaAs grown on Si substrates by MBE.

Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 4186-4193 ◽  
Author(s):  
P. Sheldon ◽  
B. G. Yacobi ◽  
K. M. Jones ◽  
D. J. Dunlavy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area
Sign in / Sign up

Export Citation Format

Share Document