Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy

1994 ◽  
Vol 12 (2) ◽  
pp. 1113 ◽  
Author(s):  
C. Jelen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates ◽  
Gas Source

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 950-954 ◽  
Author(s):  
J. Zhang ◽  
X.M. Zhang ◽  
A. Matsumura ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy

1998 ◽  
Vol 72 (7) ◽  
pp. 845-847 ◽  
Author(s):  
Lyu-fan Zou ◽  
Z. G. Wang ◽  
D. Z. Sun ◽  
T. W. Fan ◽  
X. F. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source ◽  
Ion Implanted

scholarly journals Pulse source injection molecular beam epitaxy and characterization of nano-scale thin GaN layers on Si substrates

2006 ◽  
Vol 200 (10) ◽  
pp. 3230-3234 ◽  
Author(s):  
W. Tong ◽  
M. Harris ◽  
B.K. Wagner ◽  
J.W. Yu ◽  
H.C. Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Pulse Source ◽  
Si Substrates ◽  
Nano Scale

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 306-309 ◽  
Author(s):  
Chunhui Yan ◽  
Dianzhao Sun ◽  
Hongxi Guo ◽  
Xiaobing Li ◽  
Shirong Zu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Gas Source
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