Characterization of GaAs films grown on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 46 ◽  
pp. 896-897
Author(s):  
J.B. Posthill ◽  
J. Tarn ◽  
T.P. Humphreys ◽  
K. Das ◽  
J.J. Wortman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Ex Situ ◽  
Material System ◽  
Bulk Gaas ◽  
Si Substrates

Because of several potential applications and advantages afforded by the heteroepitaxial GaAs-on-Silicon material system, several groups world-wide are attempting to grow device-quality GaAs on Si substrates.eg.1 Both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) growth techniques have been widely utilized to achieve heteroepitaxial growth. However, certain fundamental materials and growth problems have thus far prevented any group from achieving heteroepitaxial GaAs of a quality similar to that obtainable from bulk GaAs crystals. A high density of threading dislocations, microtwins/stacking faults, antiphase domain boundaries (APBs) and microfissures can form under non-ideal conditions. These defects result, in part, from stresses generated due to the ∼4% lattice mismatch and the different coefficients of thermal expansion between GaAs and Si.2 Ex-situ characterization of this materials system is essential to assess the material quality and to provide direction for future growth experiments. This contribution describes the TEM characterization methodology that we employ to analyze our GaAs grown on Si substrates by MBE.

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Venkatasubramanian ◽  
P. R. Sharps ◽  
M. L. Timmons ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Multilayer Structures ◽  
Si Substrate ◽  
Mbe Growth ◽  
Etch Pit ◽  
Layer Structures ◽  
Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
J.H. Kim ◽  
S. Sakai ◽  
J.K. Liu ◽  
G. Raohakrishnan ◽  
S.S. Chang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Light Emitting ◽  
Si Substrates ◽  
Molecular Beam Epitaxial

ABSTRACTWe first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layers on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100) Sisubstrates misoriented 4 toward [110] direction. The MEMBE growth method isdescribed and material properties are compared with those of normal two-step MBE-grown or in-situ annealed layers. Micrographs of cross-sectional view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 107 cm-2 over ten times lower than those of two-step MBE-grown or in-situ annealedlayers. AlGaAs/GaAs double heterostructure lasers and light-emitting diodeshave been successfully grown on MEMBE GaAs/Si by both metal organic chemical vapor deposition and liquid phase epitaxy. MOCVD-grown lasers showed peak output power as high as 184 mW/facet, pulsed threshold currents as low as150 mA at 300 K, and differential quantum efficiencies of up to 30 %. The LPE-grown light-emitting diodes showed output powers of 1.5 mW and external quantum efficiencies of 3.3 mW/A per facet.

scholarly journals Pulse source injection molecular beam epitaxy and characterization of nano-scale thin GaN layers on Si substrates

2006 ◽  
Vol 200 (10) ◽  
pp. 3230-3234 ◽  
Author(s):  
W. Tong ◽  
M. Harris ◽  
B.K. Wagner ◽  
J.W. Yu ◽  
H.C. Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Pulse Source ◽  
Si Substrates ◽  
Nano Scale

Growth and Characterization of Inas Quantum Dots on Silicon

1999 ◽  
Vol 583 ◽  
Author(s):  
L. Hansen ◽  
A. Ankudinov ◽  
F. Bensing ◽  
J. Wagner ◽  
G. Ade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Material System ◽  
Inas Quantum Dots ◽  
New Material ◽  
The One ◽  
Insight Into

AbstractUp to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 339-343 ◽  
Author(s):  
Shota Sambonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
Sergey Filimonov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Growth Conditions ◽  
Si Substrate ◽  
Si Substrates ◽  
High Interest ◽  
Gas Source ◽  
Gas Pressures

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20 %) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 950-954 ◽  
Author(s):  
J. Zhang ◽  
X.M. Zhang ◽  
A. Matsumura ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source
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