Simple, very low dark current, planar long‐wavelength avalanche photodiode

1988 ◽  
Vol 53 (14) ◽  
pp. 1311-1313 ◽  
Author(s):  
Y. Liu ◽  
S. R. Forrest ◽  
V. S. Ban ◽  
K. M. Woodruff ◽  
J. Colosi ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiode ◽  
Long Wavelength

Simple, very low dark current, planar long-wavelength avalanche photodiode

1989 ◽  
Author(s):  
Y. LIU ◽  
STEPHEN R. FORREST ◽  
V. S. BAN ◽  
K. M. WOODRUFF ◽  
J. COLOSI ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiode ◽  
Long Wavelength

scholarly journals Simulation of Extended Wavelength Avalanche Photodiode with the Type-II Superlattice Absorption Layer

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1210
Author(s):  
Wei-Lin Zhao ◽  
Wei Wang ◽  
Chen Liu ◽  
Ze-Peng Hou ◽  
Hai-Feng Ye ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Dark Current ◽  
Structural Parameters ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Fine Tuning ◽  
Long Wavelength ◽  
Type Ii Superlattice ◽  
Absorption Layer ◽  
The Relationship

The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, the absorption layer of APD was replaced with InGaAs/GaAsSb superlattice compared to conventional InGaAs/InP SAGCM APD. The results indicated that the breakdown voltage increased with the doping concentration of the absorption layer. When the thickness of the multiplication layer increased from 0.1 μm to 0.6 μm, the linear range of punchthrough­­­ voltage increased from 16 V to 48 V, and the breakdown voltage decreased at first and then increased when the multiplication layer reached the critical thickness at 0.35 μm. The grading layer could not only slow down the hole carrier, but also adjust the electric field. The dark current was reduced to about 10 nA and the gain was over 100 when the APD was cooled to 240 K. The response wavelength APD could be extended to 2.8 μm by fine tuning the superlattice parameters. The simulation results indicated that the APD using superlattice materials has potential to achieve a long wavelength response, a high gain, and a low dark current.

scholarly journals Design of a bandgap-engineered barrier-blocking HOT HgCdTe long-wavelength infrared avalanche photodiode

2020 ◽  
Vol 28 (22) ◽  
pp. 33556 ◽  
Author(s):  
Jiale He ◽  
Qing Li ◽  
Peng Wang ◽  
Fang Wang ◽  
Yue Gu ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Long Wavelength ◽  
Engineered Barrier ◽  
Long Wavelength Infrared

Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors

2021 ◽  
pp. 104006
Author(s):  
Su-Ning Cui ◽  
Wei-Qiang Chen ◽  
Dong-Wei Jiang ◽  
Dong-hai Wu ◽  
Guo-Wei Wang ◽  
...  
Keyword(s):  
Dark Current ◽  
Long Wavelength ◽  
Barrier Detectors ◽  
Long Wavelength Infrared
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