Analysis of dark current in long-wavelength HgCdTe junction diodes at low temperature and an approximate method to calculate the trap density of depletion region

2012 ◽  
Author(s):  
Hua Hua ◽  
Xiaohui Xie ◽  
Xiaoning Hu
Keyword(s):  
Low Temperature ◽  
Approximate Method ◽  
Dark Current ◽  
Depletion Region ◽  
Trap Density ◽  
Long Wavelength

scholarly journals Dark current reduction in a long wavelength quantum well infrared photodetector operating at low temperature

2011 ◽  
Vol 54 (3) ◽  
pp. 189-193 ◽  
Author(s):  
Emmanuel Lhuillier ◽  
Nicolas Péré-Laperne ◽  
Emmanuel Rosencher ◽  
Isabelle Ribet-Mohamed ◽  
Alexandru Nedelcu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Current Reduction

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Low-temperature performance of InP-based long-wavelength VCSELs

2007 ◽  
Vol 89 (4) ◽  
pp. 579-584 ◽  
Author(s):  
A. Lytkine ◽  
A. Lim ◽  
J. Bacque ◽  
W. Jäger ◽  
J. Tulip
Keyword(s):  
Low Temperature ◽  
Long Wavelength ◽  
Temperature Performance ◽  
Low Temperature Performance

Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors

2021 ◽  
pp. 104006
Author(s):  
Su-Ning Cui ◽  
Wei-Qiang Chen ◽  
Dong-Wei Jiang ◽  
Dong-hai Wu ◽  
Guo-Wei Wang ◽  
...  
Keyword(s):  
Dark Current ◽  
Long Wavelength ◽  
Barrier Detectors ◽  
Long Wavelength Infrared

The Position of Carotene in the D-1/D-2 Sub-Core Complex of Photosystem II

1988 ◽  
Vol 43 (3-4) ◽  
pp. 226-230 ◽  
Author(s):  
S. S. Brody
Keyword(s):  
Low Temperature ◽  
Photosystem Ii ◽  
Fluorescence Spectrum ◽  
Fluorescence Excitation Spectrum ◽  
Core Complex ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Pheophytin A ◽  
Long Wavelength ◽  
Β Carotene

When the sub-core complex of photosystem II, D1/D2, is irradiated at 436 or 415 nm (absorption by chlorophyll and pheophytin and β-carotene) or 540 nm (absorption primarily by pheophytin), the low temperature fluorescence spectrum has two maxima, at 685 and 674 nm. This shows the existence of at least two different fluorescent forms of chlorophyll (chlorophyll a and perhaps pheophytin a). When carotene is irradiated at 485 nm (absorption primarily by β-carotene), only fluorescence at 685 nm is observed: this indicates that carotene is transferring energy to only the long-wavelength form of chlorophyll in the D1/D2 sub-core complex. The band of carotene (at 485 nm) does not appear in the fluorescence excitation spectrum, measured at 674 nm. The position of the carotene molecule relative to each of the fluorescent forms of chlorophyll was determined from the excitation spectra of each of the fluorescence bands.

Thin-film Photodiode with an a-Si:H/nc-Si:H Absorption Bilayer

2011 ◽  
Vol 1321 ◽  
Author(s):  
Y. Vygranenko ◽  
M. Vieira ◽  
A. Sazonov
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Near Infrared ◽  
Spectral Response ◽  
Nanocrystalline Silicon ◽  
Depletion Region ◽  
Long Wavelength ◽  
Near Ultraviolet ◽  
High Bias ◽  
Bias Range

ABSTRACTWe report on the fabrication and characterization of n+-n-i-δi-p thin-film photodiodes with an active region comprising a hydrogenated nanocrystalline silicon (nc-Si:H) n-layer and a hydrogenated amorphous silicon (a-Si:H) i-layer. The combination of wide- and narrow-gap absorption layers enables the spectral response extending from the near-ultraviolet (NUV) to the near-infrared (NIR) region. Moreover, in the low-bias range, when only the i-layer is depleted, the leakage current is significantly lower than that in the conventional nc-Si:H n+-n-p+ photodiode deposited under the same deposition conditions. Device with the 900nm/400nm thick n-i-layers exhibits a reverse dark current density of 3 nA/cm2 at −1V. In the high-bias range, when the depletion region expands within the n-layer, the magnitude of the leakage current depends on electronic properties of nc-Si:H. The density of shallow and deep states, and diffusion length of holes in the n-layer have been estimated from the capacitance-voltage characteristics and from the bias dependence of the long-wavelength response, respectively. To improve the quantum efficiency in the NIR-region, we have also implemented a Cr / ZnO:Al back reflector. The observed long-wavelength spectral response is about twice as high as that for a reference photodiode without ZnO:Al layer. Results demonstrate the feasibility of the photodiode for low-level light detection in the NUV-to-NIR spectral range.

Surface Passivation and the Ultrafast Optical Response of Low-Temperature-Grown GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson
Keyword(s):  
Low Temperature ◽  
Dark Current ◽  
Surface Passivation ◽  
Surface States ◽  
Time Response ◽  
Temporal Response ◽  
Dc Voltage ◽  
Ultrafast Optical ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.

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