scholarly journals Simulation of Extended Wavelength Avalanche Photodiode with the Type-II Superlattice Absorption Layer

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1210
Author(s):  
Wei-Lin Zhao ◽  
Wei Wang ◽  
Chen Liu ◽  
Ze-Peng Hou ◽  
Hai-Feng Ye ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Dark Current ◽  
Structural Parameters ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Fine Tuning ◽  
Long Wavelength ◽  
Type Ii Superlattice ◽  
Absorption Layer ◽  
The Relationship

The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, the absorption layer of APD was replaced with InGaAs/GaAsSb superlattice compared to conventional InGaAs/InP SAGCM APD. The results indicated that the breakdown voltage increased with the doping concentration of the absorption layer. When the thickness of the multiplication layer increased from 0.1 μm to 0.6 μm, the linear range of punchthrough­­­ voltage increased from 16 V to 48 V, and the breakdown voltage decreased at first and then increased when the multiplication layer reached the critical thickness at 0.35 μm. The grading layer could not only slow down the hole carrier, but also adjust the electric field. The dark current was reduced to about 10 nA and the gain was over 100 when the APD was cooled to 240 K. The response wavelength APD could be extended to 2.8 μm by fine tuning the superlattice parameters. The simulation results indicated that the APD using superlattice materials has potential to achieve a long wavelength response, a high gain, and a low dark current.

Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode

2013 ◽  
Vol 652-654 ◽  
pp. 612-615 ◽  
Author(s):  
D.P. Hu ◽  
D. Y. Xiong ◽  
F.M. Guo
Keyword(s):  
Numerical Simulation ◽  
Breakdown Voltage ◽  
Dark Current ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Charge Layer ◽  
Avalanche Gain ◽  
Simulation Results

We present the simulation results of the InGaAs/InP avalanche photodiode (APD). In the structure a 70 nm InGaAsP grade charge layer and a 70 nm InP charge layer between absorption and multiplication layer have been used for reducing the dark current and achieving higher avalanche gain. A 50 avalanche gain around 35 V breakdown voltages has obtained, which has enhanced by nearly 4 times than that of the conventional InGaAs/InP APD. It has been also shown that the dark current in the device can be significantly reduced nearly one order compared to the corresponding conventional one. The numerical simulation means may design the high gain and low breakdown voltage InGaAs/InP APD.

Simple, very low dark current, planar long-wavelength avalanche photodiode

1989 ◽  
Author(s):  
Y. LIU ◽  
STEPHEN R. FORREST ◽  
V. S. BAN ◽  
K. M. WOODRUFF ◽  
J. COLOSI ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiode ◽  
Long Wavelength

Charge layer optimized 4H-SiC SACM avalanche photodiode with low breakdown voltage and high gain

2019 ◽  
Vol 58 (10) ◽  
pp. 100913 ◽  
Author(s):  
Junkang Wu ◽  
Mingkun Zhang ◽  
Zhao Fu ◽  
Rongdun Hong ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Charge Layer

scholarly journals Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Band Structure ◽  
High Performance ◽  
Earth Science ◽  
Optical Gain ◽  
High Gain ◽  
Type Ii ◽  
Applied Bias ◽  
Long Wavelength ◽  
Type Ii Superlattice ◽  
A Value

AbstractThe LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/e cut-off wavelength of the device is 8.0 µm. At 77 K, unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10−7 A/cm2. The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV. This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34 × 1013 cm Hz1/2/W at a peak detection wavelength of ~6.8 µm. The type-II superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach.

Simple, very low dark current, planar long‐wavelength avalanche photodiode

1988 ◽  
Vol 53 (14) ◽  
pp. 1311-1313 ◽  
Author(s):  
Y. Liu ◽  
S. R. Forrest ◽  
V. S. Ban ◽  
K. M. Woodruff ◽  
J. Colosi ◽  
...  
Keyword(s):  
Dark Current ◽  
Avalanche Photodiode ◽  
Long Wavelength

scholarly journals Plasmonic hot-electron photodetection with quasi-bound states in the continuum and guided resonances

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Wenhao Wang ◽  
Lucas V. Besteiro ◽  
Peng Yu ◽  
Feng Lin ◽  
Alexander O. Govorov ◽  
...  
Keyword(s):  
Bound States ◽  
Structural Parameters ◽  
Hybrid Structure ◽  
Fine Tuning ◽  
Hot Electrons ◽  
Hot Electron ◽  
Perfect Absorption ◽  
High Loss ◽  
Guided Mode ◽  
The Continuum

Abstract Hot electrons generated in metallic nanostructures have shown promising perspectives for photodetection. This has prompted efforts to enhance the absorption of photons by metals. However, most strategies require fine-tuning of the geometric parameters to achieve perfect absorption, accompanied by the demanding fabrications. Here, we theoretically propose a Ag grating/TiO2 cladding hybrid structure for hot electron photodetection (HEPD) by combining quasi-bound states in the continuum (BIC) and plasmonic hot electrons. Enabled by quasi-BIC, perfect absorption can be readily achieved and it is robust against the change of several structural parameters due to the topological nature of BIC. Also, we show that the guided mode can be folded into the light cone by introducing a disturbance to become a guided resonance, which then gives rise to a narrow-band HEPD that is difficult to be achieved in the high loss gold plasmonics. Combining the quasi-BIC and the guided resonance, we also realize a multiband HEPD with near-perfect absorption. Our work suggests new routes to enhance the light-harvesting in plasmonic nanosystems.

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