Application of lateral photovoltage towards contactless light beam induced current measurements and its dependence on the finite beam size

2014 ◽  
Vol 85 (7) ◽  
pp. 075118 ◽  
Author(s):  
Atul Prakash Abhale ◽  
K. S. R. Koteswara Rao
Keyword(s):  
Light Beam ◽  
Beam Size ◽  
Induced Current

scholarly journals Analysis of solar cell cross sections with micro-light beam induced current (µLBIC)

2014 ◽  
Vol 131 ◽  
pp. 124-128 ◽  
Author(s):  
Matthias Breitwieser ◽  
Friedemann D. Heinz ◽  
Andreas Büchler ◽  
Martin Kasemann ◽  
Jonas Schön ◽  
...  
Keyword(s):  
Solar Cell ◽  
Light Beam ◽  
Cross Sections ◽  
Induced Current

EFFECTS OF LIGHT BEAM SIZE ON FLUENCE DISTRIBUTION AND DEPTH OF NECROSIS IN SUPERFICIALLY APPLIED PHOTODYNAMIC THERAPY OF NORMAL RAT BRAIN

1992 ◽  
Vol 56 (3) ◽  
pp. 379-384 ◽  
Author(s):  
Qun Chen ◽  
Brian C. Wilson ◽  
Mary O. Dereski ◽  
Michael S. Patterson ◽  
Michael Chopp ◽  
...  
Keyword(s):  
Photodynamic Therapy ◽  
Rat Brain ◽  
Light Beam ◽  
Beam Size ◽  
Normal Rat

Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements

2009 ◽  
Vol 156-158 ◽  
pp. 431-436
Author(s):  
P. Saring ◽  
C. Rudolf ◽  
L. Stolze ◽  
A. Falkenberg ◽  
Michael Seibt
Keyword(s):  
Light Beam ◽  
Induced Current ◽  
Copper Precipitation ◽  
Copper Nickel ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
The One ◽  
Co Precipitation ◽  
Wafer Direct Bonding

We report on a light-beam-induced current (LBIC)-analysis of metal silicide defects arising from co-precipitation of copper and nickel in Cz-silicon-bicrystals produced by wafer direct bonding. Large colonies of silicide precipitates in the one wafer emerging from undisturbed growth from few nucleation sites were observed in different orientations with respect to the surface which correspond to Si {110} planes. From this, the colonies formed during copper-nickel co-precipitation reveal the same attributes as those colonies typical for copper precipitation in the absence of nickel. Oxygen related defects associated with a higher defect distribution in the other wafer were characterized by means of high resolution Transmission Electron Microscopy (TEM) and their temperature dependent LBIC signal.

An applied light-beam induced current study of dye-sensitised solar cells: Photocurrent uniformity mapping and true photoactive area evaluation

2014 ◽  
Vol 116 (4) ◽  
pp. 043104 ◽  
Author(s):  
Timothy W. Jones ◽  
Krishna Feron ◽  
Kenrick F. Anderson ◽  
Benjamin C. Duck ◽  
Gregory J. Wilson
Keyword(s):  
Solar Cells ◽  
Light Beam ◽  
Induced Current

Gettering of Dissolved and Segregated Impurities in Multicrystalline Silicon Wafers

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Stemmer ◽  
I. Perichaud ◽  
S. MartiNuzzi
Keyword(s):  
Grain Boundaries ◽  
Light Beam ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Extended Defects ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
Cast Ingot ◽  
Crystallographic Defects ◽  
Homogeneous Regions

ABSTRACTPhosphorus gettering by diffusion from a POCl3 source was applied to matched wafers cut out of the same region of a cast ingot. Light Beam Induced Current mappings with wavelengths in the range between 840 and 980 nm lead to follow the variation of minority carrier diffusion length after gettering at 900°C for 120 and 240 mn, especially near extended crystallographic defects like dislocations and grain boundaries.The mappings show that after the gettering treatments, the local values of L increase due to the reduction of the recombination strength of extended defects and to the improvement of the homogeneous regions of the grains.As SIMS analyses indicate that Fe, Cu and Ni atoms are gettered, it is reasonable to assume that these impurities were initially dissolved in the grains and also segregated at the extended defects.

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