scholarly journals MINORITY CARRIER LIFETIME AND POTENTIAL BARRIER HEIGHT IN POLYCRYSTALLINE SILICON : EFFECTS OF LOW TEMPERATURE ANNEALINGS AND NEUTRON IRRADIATION

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-95-C1-101
Author(s):  
D. Bielle-Daspet ◽  
M. Roux ◽  
J. Farah
Keyword(s):  
Low Temperature ◽  
Barrier Height ◽  
Potential Barrier ◽  
Neutron Irradiation ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Potential Barrier Height

Relationship Between Minority Carrier Parameters and Solar Cell Characteristics of Electromagnetic Cast Polycrystalline Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Eiichi Suzuki ◽  
Kyojiro Kaneko ◽  
Toru Nunoi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Small Variation ◽  
Minority Carrier Lifetime ◽  
The Relationship ◽  
And Diffusion

AbstractThe relationship between minority carrier properties and solar cell characteristics of electromagnetic (EM) cast polycrystalline Si has experimentally been investigated. The minority carrier lifetime τ and diffusion coefficient D were evaluated by a novel dual mercury probe method. The solar cell characteristics, e.g., a conversion efficiency η were measured by fabricating experimental solar cells using the corresponding wafers. The wafer showing high-η (13.1%) has relatively high τ (av. 8.2 μs) with small variation of I) (av. 29.6 cm2/s). On the contrary, the low-η (11%) wafer shows low τ (av. 1.1 μs), including some inferior portions with very low τ of less than 0.5 μs. It is also shown that D drastically deteriorates with decreasing τ if τ is less than around 2 μs. To realize high efficiency polycrystalline solar cells, the wafers with high value of τ and without considerably low-τ portions are needed.

Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

2005 ◽  
Vol 275 (1-2) ◽  
pp. e491-e494 ◽  
Author(s):  
Y. Ohshita ◽  
Y. Nishikawa ◽  
M. Tachibana ◽  
V.K. Tuong ◽  
T. Sasaki ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Defects And Impurities
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