Minority carrier lifetime of thin polycrystalline silicon nanowire films on polycrystalline silicon layer prepared by aluminum-induced crystallization

2014 ◽  
Author(s):  
Tatsuya Yamazaki ◽  
Shinya Kato ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Silicon Nanowire ◽  
Silicon Layer ◽  
Minority Carrier Lifetime ◽  
Thin Polycrystalline ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Thin-Film Polycrystalline-Silicon Solar Cells on Ceramic Substrates Made by Aluminum-Induced Crystallization and Thermal CVD

2006 ◽  
Vol 910 ◽  
Author(s):  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Lode Carnel ◽  
Kris Van Nieuwenhuysen ◽  
Guy Beaucarne ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Substrate Roughness ◽  
Ceramic Substrates ◽  
Thermal Cvd ◽  
Si Solar Cells ◽  
Thin Polycrystalline ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractA considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from thin polycrystalline-silicon (pc-Si) layers. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening is an effective way to obtain large-grained pc-Si layers with excellent properties for solar cells. To obtain efficient solar cells, the electronic quality of the pc-Si material obtained by AIC has to be optimized and the cell design has to be adapted to the material. In this paper, we report on pc-Si solar cells made by AIC in combination with thermal CVD on ceramic alumina substrates. We made pc-Si solar cells on alumina substrates that showed Voc values up to 533 mV and efficiencies up to 5.9%. This is the highest efficiency ever achieved with pc-Si solar cells on ceramic substrates where no (re)melting of silicon was used. We demonstrate that the quality of the pc-Si material can be improved drastically by reducing the substrate roughness using spin-on oxides. We further show that a-Si/c-Si heterojunctions lead to much higher Voc values than diffused homojunctions. A cell concept that incorporates spin-on oxides and heterojunction emitters is therefore best suited to obtain efficient pc-Si solar cells on alumina substrates.

Relationship Between Minority Carrier Parameters and Solar Cell Characteristics of Electromagnetic Cast Polycrystalline Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Eiichi Suzuki ◽  
Kyojiro Kaneko ◽  
Toru Nunoi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Small Variation ◽  
Minority Carrier Lifetime ◽  
The Relationship ◽  
And Diffusion

AbstractThe relationship between minority carrier properties and solar cell characteristics of electromagnetic (EM) cast polycrystalline Si has experimentally been investigated. The minority carrier lifetime τ and diffusion coefficient D were evaluated by a novel dual mercury probe method. The solar cell characteristics, e.g., a conversion efficiency η were measured by fabricating experimental solar cells using the corresponding wafers. The wafer showing high-η (13.1%) has relatively high τ (av. 8.2 μs) with small variation of I) (av. 29.6 cm2/s). On the contrary, the low-η (11%) wafer shows low τ (av. 1.1 μs), including some inferior portions with very low τ of less than 0.5 μs. It is also shown that D drastically deteriorates with decreasing τ if τ is less than around 2 μs. To realize high efficiency polycrystalline solar cells, the wafers with high value of τ and without considerably low-τ portions are needed.

Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

2005 ◽  
Vol 275 (1-2) ◽  
pp. e491-e494 ◽  
Author(s):  
Y. Ohshita ◽  
Y. Nishikawa ◽  
M. Tachibana ◽  
V.K. Tuong ◽  
T. Sasaki ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Defects And Impurities

Influences of Phosphorous Gettering on Minority Carrier Lifetime Distribution of Polycrystalline Silicon Wafer

2012 ◽  
Vol 569 ◽  
pp. 229-232
Author(s):  
Shi Hui Ma ◽  
Cai Zhe Hao ◽  
Xian Jiang
Keyword(s):  
Silicon Wafer ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Metal Elements ◽  
Pn Junction ◽  
Junction Formation ◽  
Defects And Impurities ◽  
Impurities And Defects

The influences of the phosphorus gettering in PN junction formation on the distribution of minority carrier lifetime of polycrystalline silicon wafer in solar cell production process were studied. The experimental results shows that the distribution of internal defects and impurities in polycrystalline silicon wafer significantly impact on the effectiveness of the phosphorus gettering during preparation of PN junction through the phosphorus diffusion technology. Especially when the impurities were transition metal elements, it caused a large difference of the phosphorus gettering effectiveness in PN junction preparation, which was due to the presence and interaction of defects and impurities on polycrystalline silicon wafer, such as grain boundaries, dislocations, oxygen and carbon, and other metal elements. In addition, the uneven distribution of impurities and defects of also influenced the phosphorus gettering effectiveness.

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