A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-511-C4-514
Author(s):  
Y. Sawan ◽  
M. El-Gabaly ◽  
F. Wakim ◽  
S. Atari
Keyword(s):  
Amorphous Semiconductor ◽  
Type Silicon ◽  
P Type

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type

Radiation damage in p-type silicon irradiated with neutrons and protons

2009 ◽  
Vol 599 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Vladimir Cindro ◽  
Gregor Kramberger ◽  
Manuel Lozano ◽  
Igor Mandić ◽  
Marko Mikuž ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Type Silicon ◽  
P Type

Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

2015 ◽  
Vol 3 (24) ◽  
pp. 6307-6313 ◽  
Author(s):  
Chao Xie ◽  
Fangze Li ◽  
Longhui Zeng ◽  
Linbao Luo ◽  
Li Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Fast Speed ◽  
Type Silicon ◽  
P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type
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