Influence of processing parameters on dielectric properties of PZT thin films on steel substrates

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-61-Pr9-64 ◽  
Author(s):  
S. Seifert ◽  
P. Löbmann ◽  
D. Sporn
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Processing Parameters ◽  
Pzt Thin Films ◽  
Steel Substrates

Application of Sol-Gel Derived Conductive Oxide LaNiO3 in Pyroelectric Detector

2011 ◽  
Vol 687 ◽  
pp. 233-237
Author(s):  
Jing Wang ◽  
Chuan Wei Zang ◽  
Liang Ying Zhang ◽  
Xi Yao
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Infrared Detector ◽  
Sol Gel ◽  
Voltage Response ◽  
Electrical Measurements ◽  
Pzt Thin Films ◽  
Force Microscopy ◽  
Layer Thin Film

Conductive LaNiO3(LNO) thin films are grown on Si(100) substrates by a sol-gel method and their application as the bottom electrode for the growth of sol-gel derived Pb(Zr,Ti)O3(PZT) thin films are studied. Morphology and electrical properties of the multilayer films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), electrical measurements. Experiment results show LNO thin films get highly (110)-oriented perovskite-type structure. Smooth and dense surfaces are observed on LNO thin films. The dielectric properties of PZT films show that PZT/LNO films exhibit worse dielectric properties than those of the PZT/Pt thin films. And LNO thin films prepared by sol-gel methods are not suitable as bottom electrode to deposit PZT thin films. On the other hand, FTIR spectrum and pyroelectric results of LNO thin films reveal that LNO can be used as absorber layer of PT thin films infrared detector with multi-layer thin film thermal insulation structure. At 10Hz, the detectivity (D*) and the voltage response (Rv) of PT thin films are 1.11×107cm·Hz1/2/W, 1.46×103V/W respectively.

Effects of annealing on domain-wall contributions to the dielectric properties of PZT thin films

2013 ◽  
Vol 63 (10) ◽  
pp. 2002-2007 ◽  
Author(s):  
Sam Yeon Cho ◽  
Jin Ho Kwak ◽  
Sun A. Yang ◽  
Sang Don Bu ◽  
Sungkyun Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Pzt Thin Films

scholarly journals Characterization of Chemically Prepared PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Bruce A. Tuttle ◽  
R.W. Schwartz ◽  
D.H. Doughty ◽  
J.A. Voigt ◽  
A.H. Carim
Keyword(s):  
Thin Films ◽  
Heating Rate ◽  
Process Parameters ◽  
Ferroelectric Properties ◽  
Process Variations ◽  
Processing Parameters ◽  
Process Conditions ◽  
Heating Rates ◽  
Pzt Thin Films ◽  
Si Substrates

ABSTRACTWe have systematically varied processing parameters to fabricate PZT 53/47 thin films. Polycrystalline PZT thin films were fabricated by spin depositing Pt coated Sio2/Si substrates with alkoxide solutions. Our study focused on two process parameters: 1) heating rate and 2) excess Pb additions. We used rapid thermal processing techniques to vary heating rates from 3°C/min to 8400°C/min. Films were characterized with the following excess Pb additions: 0, 3, 5, and 10 mol% For all process variations, films with greater perovskite content had better ferroelectric properties. Our best films were fabricated using the following process parameters: an excess Pb addition of 5 mol%, a heating rate of 8400°C/min and annealing conditions of 700°C for 1 min. Films fabricated using these process conditions had a remanent polarization of 0.27 C/m2and a coercive field of 3.4 MV/m.

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