Dislocation-Point Defect Interaction Effect on Local Electrical Properties of Semiconductors

1997 ◽  
Vol 7 (12) ◽  
pp. 2293-2307 ◽  
Author(s):  
E. B. Yakimov
Keyword(s):  
Electrical Properties ◽  
Point Defect ◽  
Interaction Effect ◽  
Defect Interaction

Guidance on a Defect Interaction Effect for In-Plane Surface Cracks Using Elastic Finite Element Analyses

2008 ◽  
Author(s):  
Nam-Su Huh ◽  
Suhn Choi ◽  
Keun-Bae Park ◽  
Jong-Min Kim ◽  
Jae-Boong Choi ◽  
...  
Keyword(s):  
Stress Intensity Factor ◽  
Finite Element ◽  
Stress Intensity ◽  
Fracture Mechanics ◽  
Intensity Factor ◽  
Interaction Effect ◽  
Elastic Stress ◽  
Plane Surface ◽  
Surface Cracks ◽  
Defect Interaction

The crack-tip stress fields and fracture mechanics assessment parameters, such as the elastic stress intensity factor and the elastic-plastic J-integral, for a surface crack can be significantly affected by adjacent cracks. Such a defect interaction effect due to multiple cracks can magnify the fracture mechanics assessment parameters. There are many factors to be considered, for instance the relative distance between adjacent cracks, crack shape and loading condition, to quantify a defect interaction effect on the fracture mechanics assessment parameters. Thus, the current guidance on a defect interaction effect (defect combination rule), including ASME Sec. XI, BS7910, British Energy R6 and API RP579, provide different rules for combining multiple surface cracks into a single surface crack. The present paper investigates a defect interaction effect by evaluating the elastic stress intensity factor of adjacent surface cracks in a plate along the crack front through detailed 3-dimensional elastic finite element analyses. The effects of the geometric parameters, the relative distance between cracks and the crack shape, on the stress intensity factor are systematically investigated. As for the loading condition, only axial tension is considered. Based on the elastic finite element results, the acceptability of the defect combination rules provided in the existing guidance was investigated, and the relevant recommendations on a defect interaction for in-plane surface cracks in a plate were discussed.

Point defect interaction in tranversally isotropic ferroelectrics

PAMM ◽  
2008 ◽  
Vol 8 (1) ◽  
pp. 10499-10500
Author(s):  
Oliver Goy ◽  
Ralf Mueller
Keyword(s):  
Point Defect ◽  
Defect Interaction

Fabrication of Shallow Junctions with Conventional Furnace Equipment by Using Silicon Preimplants

1999 ◽  
Vol 568 ◽  
Author(s):  
H. Puchner ◽  
S. Aronowitz
Keyword(s):  
Point Defect ◽  
Interaction Mechanism ◽  
Defect Interaction ◽  
Conventional Furnace ◽  
Alternative Approach ◽  
Shallow Junctions ◽  
Global Scaling ◽  
Scaling Down ◽  
Ultra Shallow Junctions ◽  
Diffusion Profiles

ABSTRACTThe global scaling down of device dimensions requires process technologies which are able to create ultra-shallow junctions. Besides using ultra-low implant energies for shallow junction creation we present an alternative approach for the creation of MDD (Medium Doped Drain) junctions by using moderately low implant energies. Our approach employs the dopant/point-defect interaction mechanism to retard dopant diffusion as well as dopant de-activation in the tail of the diffusion profiles to achieve suitable shallow junctions. The silicon preimplant allows fabrication of 90nm arsenic, 150nm phosphorus, and 140nm boron metallurgical junctions for a 40keV arsenic, 20keV phosphorus, and 8keV boron implant.

Gettering of Impurities in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. Ourmazd
Keyword(s):  
Point Defect ◽  
Strain Field ◽  
Field Point ◽  
Defect Interaction ◽  
Defect Interactions

ABSTRACTDespite the apparent dissimilarities between different gettering methods, we show that many can be understood in terms of two basic mechanisms. The first involves the interaction of selfinterstitials (emitted, for example, by P in-diffusion and precipitation, 0 precipitation, or Ar implantation) with the impurities to be gettered. The second relies on a strain-field/point defect interaction (for example around a dislocation), which appears capable of enhancing the diffusivity of the impurities. In either case, gettering can be viewed as a particular and particularly useful instance of the wider class of defect/defect interactions.

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