Point-defect interaction in a dislocation core

2000 ◽  
Vol 43 (4) ◽  
pp. 320-327 ◽  
Author(s):  
I. T. Suprun
Keyword(s):  
Point Defect ◽  
Dislocation Core ◽  
Defect Interaction

Point defect interaction in tranversally isotropic ferroelectrics

PAMM ◽  
2008 ◽  
Vol 8 (1) ◽  
pp. 10499-10500
Author(s):  
Oliver Goy ◽  
Ralf Mueller
Keyword(s):  
Point Defect ◽  
Defect Interaction

Fabrication of Shallow Junctions with Conventional Furnace Equipment by Using Silicon Preimplants

1999 ◽  
Vol 568 ◽  
Author(s):  
H. Puchner ◽  
S. Aronowitz
Keyword(s):  
Point Defect ◽  
Interaction Mechanism ◽  
Defect Interaction ◽  
Conventional Furnace ◽  
Alternative Approach ◽  
Shallow Junctions ◽  
Global Scaling ◽  
Scaling Down ◽  
Ultra Shallow Junctions ◽  
Diffusion Profiles

ABSTRACTThe global scaling down of device dimensions requires process technologies which are able to create ultra-shallow junctions. Besides using ultra-low implant energies for shallow junction creation we present an alternative approach for the creation of MDD (Medium Doped Drain) junctions by using moderately low implant energies. Our approach employs the dopant/point-defect interaction mechanism to retard dopant diffusion as well as dopant de-activation in the tail of the diffusion profiles to achieve suitable shallow junctions. The silicon preimplant allows fabrication of 90nm arsenic, 150nm phosphorus, and 140nm boron metallurgical junctions for a 40keV arsenic, 20keV phosphorus, and 8keV boron implant.

Gettering of Impurities in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. Ourmazd
Keyword(s):  
Point Defect ◽  
Strain Field ◽  
Field Point ◽  
Defect Interaction ◽  
Defect Interactions

ABSTRACTDespite the apparent dissimilarities between different gettering methods, we show that many can be understood in terms of two basic mechanisms. The first involves the interaction of selfinterstitials (emitted, for example, by P in-diffusion and precipitation, 0 precipitation, or Ar implantation) with the impurities to be gettered. The second relies on a strain-field/point defect interaction (for example around a dislocation), which appears capable of enhancing the diffusivity of the impurities. In either case, gettering can be viewed as a particular and particularly useful instance of the wider class of defect/defect interactions.

Kink-Point Defect Interaction and Mobility of Dislocations in Semiconductors

1989 ◽  
Vol 6-7 ◽  
pp. 289-300
Author(s):  
B.Ya. Farber ◽  
H.G. Minasyan ◽  
V.I. Nikitenko
Keyword(s):  
Point Defect ◽  
Defect Interaction
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