Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo study

I.C. Kizilyalli; M. Artaki; N.J. Shah; A. Chandra

doi:10.1109/16.182496

Scaling properties and short-channel effects in submicrometer AlGaAs/GaAs MODFET's: A Monte Carlo study

IEEE Transactions on Electron Devices ◽

10.1109/16.182496 ◽

1993 ◽

Vol 40 (2) ◽

pp. 234-249 ◽

Cited By ~ 40

Author(s):

I.C. Kizilyalli ◽

M. Artaki ◽

N.J. Shah ◽

A. Chandra

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Scaling Properties ◽

Channel Effects

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Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

Journal de Physique III ◽

10.1051/jp3:1993232 ◽

1993 ◽

Vol 3 (9) ◽

pp. 1719-1728

Author(s):

P. Dollfus ◽

P. Hesto ◽

S. Galdin ◽

C. Brisset

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Monte Carlo study of a self-aligned dual 50nm-gate InAlAs/InGaAs HEMT exhibiting high performances without short-channel effects

1993 (5th) International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1993.380582 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Dollfus ◽

C. Brisset ◽

S. Galdin ◽

P. Hesto

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects

Solid-State Electronics ◽

10.1016/0038-1101(93)90239-m ◽

1993 ◽

Vol 36 (5) ◽

pp. 711-715 ◽

Cited By ~ 12

Author(s):

P. Dollfus ◽

P. Hesto

Keyword(s):

Monte Carlo ◽

Monte Carlo Study ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Dual Gate

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Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5678006 ◽

2010 ◽

Cited By ~ 3

Author(s):

Diego Guerra ◽

Richard Akis ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

...

Keyword(s):

Monte Carlo ◽

Aspect Ratio ◽

Monte Carlo Study ◽

Gate Length ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Cellular Monte Carlo

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Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation

Microelectronic Engineering ◽

10.1016/0167-9317(92)90544-2 ◽

1992 ◽

Vol 19 (1-4) ◽

pp. 781-784 ◽

Cited By ~ 1

Author(s):

P. Dollfus ◽

C. Bru ◽

S. Galdin ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Improving Short Channel Effects by Reformed U-Channel UTBB FD SOI MOSFET: A Feasible Scaled Device

Silicon ◽

10.1007/s12633-020-00861-z ◽

2021 ◽

Author(s):

Moslem Ghassemi ◽

Ali A. Orouji

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Soi Mosfet ◽

Channel Effects

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Scaling down of organic thin film transistors: short channel effects and channel length-dependent field effect mobility

Journal of Materials Science ◽

10.1007/s10853-008-3047-6 ◽

2009 ◽

Vol 44 (1) ◽

pp. 280-284 ◽

Cited By ~ 21

Author(s):

Yi Chen ◽

Ishiang Shih

Keyword(s):

Field Effect ◽

Channel Length ◽

Organic Thin Film Transistors ◽

Short Channel Effects ◽

Organic Thin Film ◽

Field Effect Mobility ◽

Short Channel ◽

Channel Effects ◽

Scaling Down ◽

Dependent Field

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Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.901075 ◽

2007 ◽

Vol 54 (8) ◽

pp. 1943-1952 ◽

Cited By ~ 66

Author(s):

A. Tsormpatzoglou ◽

C.A. Dimitriadis ◽

R. Clerc ◽

Q. Rafhay ◽

G. Pananakakis ◽

...

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Short-channel effects in SOI MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.19963 ◽

1989 ◽

Vol 36 (3) ◽

pp. 522-528 ◽

Cited By ~ 145

Author(s):

S. Veeraraghavan ◽

J.G. Fossum

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Gate topologies for mitigation of short channel effects in highly scaled AlGaN/GaN HEMTs

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2017.8126565 ◽

2017 ◽

Author(s):

Charu Gupta ◽

Anshul Gupta ◽

Anil K. Bansal ◽

Abhisek Dixit

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Gan Hemts

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