Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

2004 ◽  
Vol 27 (1-3) ◽  
pp. 29-35 ◽  
Author(s):  
St. G. Müller ◽  
J. J. Sumakeris ◽  
M. F. Brady ◽  
R. C. Glass ◽  
H. McD. Hobgood ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Epitaxial Layers ◽  
Device Performance

Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance

1986 ◽  
Vol 15 (4) ◽  
pp. 247-250 ◽  
Author(s):  
H. Beneking ◽  
P. Narozny ◽  
N. Emeis ◽  
K. H. Goetz
Keyword(s):  
Epitaxial Layers ◽  
Device Performance

Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study

2012 ◽  
Vol 195 ◽  
pp. 128-131 ◽  
Author(s):  
Hun Hee Lee ◽  
Min Sang Yun ◽  
Hyun Wook Lee ◽  
Jin Goo Park
Keyword(s):  
High Speed ◽  
Semiconductor Device ◽  
Environmental Issues ◽  
Low Power Consumption ◽  
Device Performance ◽  
Metal Gate ◽  
Feature Size ◽  
High K ◽  
Removal Of Metal

As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.

Enhancing semiconductor device performance using ordered dopant arrays

Nature ◽  
2005 ◽  
Vol 437 (7062) ◽  
pp. 1128-1131 ◽  
Author(s):  
Takahiro Shinada ◽  
Shintaro Okamoto ◽  
Takahiro Kobayashi ◽  
Iwao Ohdomari
Keyword(s):  
Semiconductor Device ◽  
Device Performance

Measuring Diffusion Lengths in Epitaxial Silicon by Surface Photovoltage

1995 ◽  
Vol 386 ◽  
Author(s):  
John Lowell ◽  
Valerie Wenner ◽  
Damon Debusk
Keyword(s):  
Transition Metals ◽  
Optical Filters ◽  
Surface Photovoltage ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Optical Surface ◽  
Epitaxial Silicon ◽  
Type Silicon ◽  
P Type ◽  
And Diffusion

ABSTRACTIn CMOS, the use of epitaxial layers for prevention of latch-up in logic technologies is well-known and pervasive. One of the crucial parameters is the amount of metallic contamination due to transition metals such as Fe in the epi since this phenomena effects both device performance and quality. However, the ability to measure this parameter on product material is not generally available due to inherent problems with most known methods. The limitation of traditional surface photovoltage is that the deep optical penetration of over a hundred microns is well-beyond the depth of most epitaxial layers and does not accurately profile the epitaxial region [1]. In this paper we report on the application of optical surface photovoltage (SPV) using a set of ultra-shallow optical filters to both quantify and qualify as-grown epitaxial layers on CZ P-type silicon. We believe that a non-contact, SPV measurement of Fe concentration and diffusion lengths within an epitaxial region has not been previously reported.

Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance

2013 ◽  
Vol 740-742 ◽  
pp. 221-224 ◽  
Author(s):  
Hrishikesh Das ◽  
Swapna Sunkari ◽  
Timothy Oldham ◽  
Josh Rodgers ◽  
Janna Casady
Keyword(s):  
Defect Concentration ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Growth Processes ◽  
Homoepitaxial Layers

Homoepitaxial layers with very good thickness and doping uniformity were grown on 4 inch 4˚ off-axis substrates in a 10x100mm planetary reactor. Process optimizations resulted in reduction of the size of the triangular defects. Aggressive pre-etching of the substrate prior to growth resulted in further suppression of the triangular defect concentration from 3-5cm-2to 0.5cm-2using the same growth processes. Even imperfect areas of the substrate with scratches show suppressed nucleation of triangular defects. JBS diodes with triangular defects show increased leakage depending on the size of the defects. This effect is more pronounced at higher voltages.

A chrysene-based liquid crystalline semiconductor for organic thin-film transistors

2018 ◽  
Vol 6 (14) ◽  
pp. 3683-3689 ◽  
Author(s):  
Yaowu He ◽  
Wenjun Xu ◽  
Imran Murtaza ◽  
Chao Yao ◽  
Yanan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Thin Film Transistors ◽  
Liquid Crystalline ◽  
Semiconductor Device ◽  
Organic Thin Film Transistors ◽  
Device Performance ◽  
Organic Thin Film ◽  
Crystalline Semiconductor

Chrysene and [1]benzothieno[3,2-b][1]benzothiophene possess a similar electronic structure, and chrysene is expected to have better semiconductor device performance than BTBT, owing to the stronger electronic couplings.

The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials

1991 ◽  
Vol 226 ◽  
Author(s):  
A. S. Jordan ◽  
V. Swaminathan
Keyword(s):  
Mechanical Properties ◽  
Shear Stress ◽  
Dislocation Density ◽  
Semiconductor Device ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Device Performance ◽  
Bulk Crystals ◽  
Dislocation Generation ◽  
Critical Resolved Shear Stress

AbstractThe thermo-mechanical properties of III-V semiconductors, in general, and of GaAs and InP in particular, are reviewed. They play an important role in many aspects of semiconductor device fabrication starting from the growth of bulk crystals. Dislocation generation in GaAs and InP are discussed with the emphasis on the theoretical and experimental aspects of reducing the dislocation density in these materials. Such mechanical properties as glide systems, critical resolved shear stress and impurity hardening are covered. The effects of dislocations on device performance are illustrated with examples from photonic and electronic devices. Finally, the effect of thermomechanical stresses in the degradation and reliability of GaAs/AlGaAs and InP/InGaAsP based opto-electronic devices is considered.

scholarly journals The damaging effects of the acidity in PEDOT:PSS on semiconductor device performance and solutions based on non-acidic alternatives

2020 ◽  
Vol 7 (7) ◽  
pp. 1759-1772 ◽  
Author(s):  
Joseph Cameron ◽  
Peter J. Skabara
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Device ◽  
Semiconductor Devices ◽  
Device Performance ◽  
Styrene Sulfonate ◽  
Organic Semiconductor Devices ◽  
Hole Transporting ◽  
Hole Transporting Material ◽  
Poly Styrene Sulfonate ◽  
Damaging Effects

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, has been widely used as an effective hole transporting material in many different organic semiconductor devices for well over a decade.

Processing and Device Performance of GaN Power Rectifiers

1999 ◽  
Vol 595 ◽  
Author(s):  
A.P. Zhang ◽  
G.T. Dang ◽  
X.A. Cao ◽  
H. Cho ◽  
F. Ren ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Contact ◽  
Planar Geometry ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Edge Termination ◽  
Schottky Rectifiers ◽  
Planar Diodes

AbstractMesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12µm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ωcm−2.

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