Enhancing semiconductor device performance using ordered dopant arrays

Nature ◽  
2005 ◽  
Vol 437 (7062) ◽  
pp. 1128-1131 ◽  
Author(s):  
Takahiro Shinada ◽  
Shintaro Okamoto ◽  
Takahiro Kobayashi ◽  
Iwao Ohdomari
Keyword(s):  
Semiconductor Device ◽  
Device Performance

Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study

2012 ◽  
Vol 195 ◽  
pp. 128-131 ◽  
Author(s):  
Hun Hee Lee ◽  
Min Sang Yun ◽  
Hyun Wook Lee ◽  
Jin Goo Park
Keyword(s):  
High Speed ◽  
Semiconductor Device ◽  
Environmental Issues ◽  
Low Power Consumption ◽  
Device Performance ◽  
Metal Gate ◽  
Feature Size ◽  
High K ◽  
Removal Of Metal

As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.

A chrysene-based liquid crystalline semiconductor for organic thin-film transistors

2018 ◽  
Vol 6 (14) ◽  
pp. 3683-3689 ◽  
Author(s):  
Yaowu He ◽  
Wenjun Xu ◽  
Imran Murtaza ◽  
Chao Yao ◽  
Yanan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Thin Film Transistors ◽  
Liquid Crystalline ◽  
Semiconductor Device ◽  
Organic Thin Film Transistors ◽  
Device Performance ◽  
Organic Thin Film ◽  
Crystalline Semiconductor

Chrysene and [1]benzothieno[3,2-b][1]benzothiophene possess a similar electronic structure, and chrysene is expected to have better semiconductor device performance than BTBT, owing to the stronger electronic couplings.

The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials

1991 ◽  
Vol 226 ◽  
Author(s):  
A. S. Jordan ◽  
V. Swaminathan
Keyword(s):  
Mechanical Properties ◽  
Shear Stress ◽  
Dislocation Density ◽  
Semiconductor Device ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Device Performance ◽  
Bulk Crystals ◽  
Dislocation Generation ◽  
Critical Resolved Shear Stress

AbstractThe thermo-mechanical properties of III-V semiconductors, in general, and of GaAs and InP in particular, are reviewed. They play an important role in many aspects of semiconductor device fabrication starting from the growth of bulk crystals. Dislocation generation in GaAs and InP are discussed with the emphasis on the theoretical and experimental aspects of reducing the dislocation density in these materials. Such mechanical properties as glide systems, critical resolved shear stress and impurity hardening are covered. The effects of dislocations on device performance are illustrated with examples from photonic and electronic devices. Finally, the effect of thermomechanical stresses in the degradation and reliability of GaAs/AlGaAs and InP/InGaAsP based opto-electronic devices is considered.

scholarly journals The damaging effects of the acidity in PEDOT:PSS on semiconductor device performance and solutions based on non-acidic alternatives

2020 ◽  
Vol 7 (7) ◽  
pp. 1759-1772 ◽  
Author(s):  
Joseph Cameron ◽  
Peter J. Skabara
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Device ◽  
Semiconductor Devices ◽  
Device Performance ◽  
Styrene Sulfonate ◽  
Organic Semiconductor Devices ◽  
Hole Transporting ◽  
Hole Transporting Material ◽  
Poly Styrene Sulfonate ◽  
Damaging Effects

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, has been widely used as an effective hole transporting material in many different organic semiconductor devices for well over a decade.

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

2004 ◽  
Vol 27 (1-3) ◽  
pp. 29-35 ◽  
Author(s):  
St. G. Müller ◽  
J. J. Sumakeris ◽  
M. F. Brady ◽  
R. C. Glass ◽  
H. McD. Hobgood ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Epitaxial Layers ◽  
Device Performance
Sign in / Sign up

Export Citation Format

Share Document