Negative differential resistance in graphene nanoribbon superlattice field-effect transistors

2015 ◽  
Vol 10 (8) ◽  
pp. 400-403 ◽  
Author(s):  
Sheng Chang ◽  
Lei Zhao ◽  
Yawei Lv ◽  
Hao Wang ◽  
Jin He ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Graphene Nanoribbon

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

2003 ◽  
Vol 83 (4) ◽  
pp. 701-703 ◽  
Author(s):  
Kee-Youn Jang ◽  
Takeyoshi Sugaya ◽  
Cheol-Koo Hahn ◽  
Mutsuo Ogura ◽  
Kazuhiro Komori ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Gate Length

Negative Differential Resistance in Carbon Nanotube Field-Effect Transistors with Patterned Gate Oxide

ACS Nano ◽  
2010 ◽  
Vol 4 (6) ◽  
pp. 3356-3362 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Ville Kotimäki ◽  
Päivi Törmä
Keyword(s):  
Carbon Nanotube ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Differential Resistance

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 620-625 ◽  
Author(s):  
Pankaj Sharma ◽  
Laurent Syavoch Bernard ◽  
Antonios Bazigos ◽  
Arnaud Magrez ◽  
Adrian M. Ionescu
Keyword(s):  
Negative Differential Resistance ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Differential Resistance

scholarly journals Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Wan Sik Hwang ◽  
Pei Zhao ◽  
Sung Geun Kim ◽  
Rusen Yan ◽  
Gerhard Klimeck ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Electrical Conductance ◽  
Differential Resistance ◽  
Graphene Nanoribbon ◽  
Solid Polymer ◽  
Tunneling Field Effect Transistors ◽  
Bandgap Semiconductors ◽  
Esaki Diode

Abstract Controlled, tunable, and reversible negative-differential resistance (NDR) is observed in lithographically defined, atomically thin semiconducting graphene nanoribbon (GNR)-gated Esaki diode transistors at room temperature. Sub-10 nm-wide GNRs patterned by electron-beam lithography exhibit semiconducting energy bandgaps of ~0.2 eV extracted by electrical conductance spectroscopy measurements, indicating an atomically thin realization of the electronic properties of conventional 3D narrow-bandgap semiconductors such as InSb. A p–n junction is then formed in the GNR channel by electrostatic doping using graphene side gates, boosted by ions in a solid polymer electrolyte. Transistor characteristics of this gated GNR p–n junction exhibit reproducible and reversible NDR due to interband tunneling of carriers. All essential experimentally observed features are explained by an analytical model and are corroborated by a numerical atomistic simulation. The observation of tunable NDR in GNRs is conclusive proof of the existence of a lithographically defined bandgap and the thinnest possible realization of an Esaki diode. It paves the way for the thinnest scalable manifestation of low-power tunneling field-effect transistors (TFETs).

Sign in / Sign up

Export Citation Format

Share Document