Investigation of anodic silicon dioxide thin films for microelectromechanical systems applications

2014 ◽  
Vol 9 (12) ◽  
pp. 830-834 ◽  
Author(s):  
Akarapu Ashok ◽  
Prem Pal
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Microelectromechanical Systems

scholarly journals Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Akarapu Ashok ◽  
Prem Pal
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Anodic Oxidation ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Oxide Films ◽  
Mechanical Stirring

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane

2006 ◽  
Vol 88 (14) ◽  
pp. 143125 ◽  
Author(s):  
Aravind S. Killampalli ◽  
J. R. Engstrom
Keyword(s):  
Thin Films ◽  
Silicon Dioxide

Evolution of Quaterrylene Thin Films on a Silicon Dioxide Surface Using an Ultraslow Deposition Technique

2007 ◽  
Vol 111 (50) ◽  
pp. 18703-18707 ◽  
Author(s):  
Ryoma Hayakawa ◽  
Matthieu Petit ◽  
Yutaka Wakayama ◽  
Toyohiro Chikyow
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Deposition Technique

scholarly journals Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

2018 ◽  
Vol 4 (2) ◽  
pp. 77-85
Author(s):  
Deepak Bhatia ◽  
Sandipta Roy ◽  
S. Nawaz ◽  
R.S. Meena ◽  
V.R. Palkar
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Microelectromechanical Systems ◽  
Electrostatic Force ◽  
Charge Trapping ◽  
Electrostatic Force Microscopy ◽  
Zno Films ◽  
Phase Dependence ◽  
Force Microscopy ◽  
Electric Charge Distribution

In this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi0.7Dy0.3FeO3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

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