scholarly journals Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Akarapu Ashok ◽  
Prem Pal
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Anodic Oxidation ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Oxide Films ◽  
Mechanical Stirring

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

scholarly journals Low temperature mixed-mode debond fracture and fatigue characterisation of foam core sandwich

2018 ◽  
Vol 22 (4) ◽  
pp. 1039-1054 ◽  
Author(s):  
Arash Farshidi ◽  
Christian Berggreen ◽  
Leif A Carlsson
Keyword(s):  
Fracture Toughness ◽  
Growth Rate ◽  
Low Temperature ◽  
Mixed Mode ◽  
Room Temperature ◽  
Sliding Mode ◽  
Fatigue Tests ◽  
Mode I ◽  
Foam Core ◽  
Climatic Chamber

This paper experimentally investigates the effects of low temperature on fracture toughness and fatigue debond growth rate in foam core sandwich composites. Mixed-mode bending specimens were statically and cyclically tested inside a climatic chamber at a low temperature (−20°C) and at room temperature (23°C) as a reference. Testing was conducted in mode I (opening) and mixed-mode I/II (opening-sliding) mode mixities. The fatigue tests results are presented according to the modified Paris–Erdogan relation. Results showed substantial fracture toughness reduction due to low temperature. Low temperature furthermore elevated the cyclic crack growth rate.

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

2017 ◽  
Vol 727 ◽  
pp. 907-914
Author(s):  
Wen Hui Tang ◽  
Yi Jia ◽  
Bo Cheng Zhang ◽  
Chang Wei Yang ◽  
You Zhi Qu ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Gas Mixture ◽  
X Ray ◽  
Layer Deposition

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3. The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate. The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1:1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 flow rate on the nitrogen content of the thin films.

scholarly journals Palladium thin films for plasmonic hydrogen gas sensing

2019 ◽  
Vol 11 (2) ◽  
pp. 56
Author(s):  
Erwin Maciak
Keyword(s):  
Thin Films ◽  
Surface Plasmon Resonance ◽  
Low Temperature ◽  
Gas Sensor ◽  
Room Temperature ◽  
Fiber Optic ◽  
Hydrogen Sensor ◽  
Hydrogen Gas ◽  
Sensors And Actuators ◽  
Hydrogen Sensing

In this study, I prepared BK7 glass slides coated by palladium (Pd) layer by PVD technique. These samples have been employed as plasmon active structures in classic Kretschmann-based SPR set-up. The application of H2 sensing structures based on palladium plasmonic active thin films have been tested and investigated. Hydrogen sensing properties of Pd films were investigated at room temperature The reflectances of p-polarized light from Pd thin films as a function of angle of incidence and wavelength were measured in synthetic air (or nitrogen) and in gas mixtures including hydrogen. Variations of the reflectance in the presence of hydrogen gas at room temperature revealed that the samples can sense hydrogen in a wide range of concentration (0–2% vol/vol) without saturation behavior. The dynamic properties with various concentration of H2 at low temperature and dry gas mixtures was investigated and the effects of these factors on the hydrogen sensing properties were analyzed. Full Text: PDF ReferencesG. Korotcenkov, Handbook of Gas Sensor Materials: Properties, Advantages, and Shortcomings for Applications (Springer, New York 2013). CrossRef W. Jakubik, M. Urbanczyk, E. Maciak, "SAW hydrogen gas sensor based on WO3 and Pd nanostructures", Procedia Chemistry 1 (1), 200 (2009). CrossRef W. Jakubik, M. Urbanczyk, E. Maciak, T. Pustelny, "Bilayer Structures of NiOx and Pd in Surface Acoustic Wave and Electrical Gas Sensor Systems", Acta Physica Polonica A 116(3), 315 (2009). CrossRef E. Maciak, Z. Opilski, "Pd/V2O5 fiber optic hydrogen gas sensor", J. Phys. France IV 129, 137 (2005). CrossRef E. Maciak,. "Fiber optic sensor for H2 gas detection in the presence of methane based on Pd/WO3 low-coherence interferometric structure", Proc. SPIE 10455, UNSP 104550W (2017). CrossRef X. Bevenot, A. Truillet, C. Veillas, H. Gagnaire, M. Clement, "Hydrogen leak detection using an optical fibre sensor for aerospace applications", Sens. Actuators B 67, 57 (2000). CrossRef J. Homola, S.S. Yee, G. Gauglitz, "Surface plasmon resonance sensors: review", Sensors and Actuators B 54, 3 (1999). CrossRef H. Raether, Surface plasmons on smooth and rough surfaces and on gratings (Springer-Verlag, Berlin-Heidelberg 1988). CrossRef P. Tobiska, O. Hugon, A. Trouillet, H.Gagnarie, "An integrated optic hydrogen sensor based on SPR on palladium", Sensors and Actuators, B 74, 168 (2001). CrossRef Z. Opilski, E. Maciak, "Optical hydrogen sensor employing the phenomenon of the surface plasmons resonance in the palladium layer", Proc. SPIE 5576, 202 (2004). CrossRef T. Pustelny, E. Maciak, Z. Opilski, A. Piotrowska, E. Papis, K. Golaszewska, "Investigation of the ZnO sensing structure on NH3 action by means of the surface plasmon resonance method", European Physical Journal-Special Topics 154, 165 (2008). CrossRef E. Maciak, M. Procek, K. Kępska, A. Stolarczyk, "Study of optical and electrical properties of thin films of the conducting comb-like graft copolymer of polymethylsiloxane with poly(3-hexyltiophene) and poly(ethylene) glycol side chains for low temperature NO2 sensing", Thin Solid Films 618, 277 (2016). CrossRef

Low Temperature Silicon Dioxide Thin Films Deposited Using Tetramethylsilane for Stress Control and Coverage Applications

2001 ◽  
Vol 695 ◽  
Author(s):  
Xin Lin ◽  
Stephen J. Fonash
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Large Area ◽  
Deposition Pressure ◽  
Micro Electro Mechanical Systems ◽  
Stress Control ◽  
Deposition Conditions

ABSTRACTLow temperature silicon dioxide thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon precursor at 100- 200°C in the pressure range of 2- 8 Torr. PECVD TMS oxide thin films deposited at these temperatures and pressures exhibit adjustable stress. The type of stress, including tensile stress, zero stress, and compressive stress, as well as the stress level can be tailored as desired by changing the deposition conditions and film thickness. In addition, the conformality of PECVD TMS oxide thin films varies significantly with the deposition conditions. It improves when the deposition pressure is raised and the substrate temperature is reduced. The mechanisms for the variations of stress and conformality with respect to deposition conditions are discussed in this study. The adjustable stress and conformality of the PECVD TMS oxide make it a promising material for many low temperature applications, such as inter-level dielectric, micro-electro-mechanical systems (MEMs), microfabrication, and large area electronics.

scholarly journals Effect of SiO2 ratio on electrical Properties of SiO2:ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique

2019 ◽  
Vol 23 (10) ◽  
pp. 76
Author(s):  
Abdul-Majeed E. Al-Samarai1 ◽  
Zuheer. N. Majeed1 ◽  
Ghuson. H.Mohammed2
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Laser Pulse ◽  
Silicon Dioxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zno Thin Films ◽  
Pulse Deposition

In this paper zinc oxide was dopped by various concentrations (5,10,15,20,25) % of silicon dioxide. The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films. The D.C conductivity showed a decrease in activation energy by increasing doping from (Ea1=0.096 eV) to (Ea1=0.075 eV) before annealing and after annealing from (Ea1=0.048 eV) to(Ea1=0.027 eV). Hall effect showed that the concentration of carriers increases from (2.79 ×1018cm-3) to (14.29× 1018cm-3 ) before annealing and from (0.30×1016cm-3) to (26.25×1016cm-3) after annealing. The mobility decreases from(2.3cm2/v. sec) to (0.99cm2/v. sec) before annealing and from (7cm2/v. sec) to (2.5cm2/v . sec).   http://dx.doi.org/10.25130/tjps.23.2018.173  

scholarly journals Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2552
Author(s):  
Xingwei Ding ◽  
Bing Yang ◽  
Haiyang Xu ◽  
Jie Qi ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Room Temperature ◽  
Network Formation ◽  
Semiconductor Films ◽  
Uv Treatment ◽  
Indium Zinc Oxide ◽  
Izo Thin Film

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

Low-Temperature Growth of Thin Films of A12O3 with Trimethylaluminum and Hydrogen Peroxide

1991 ◽  
Vol 222 ◽  
Author(s):  
J. F. Fan ◽  
K. Sugioka ◽  
K. Toyoda
Keyword(s):  
Thin Films ◽  
Hydrogen Peroxide ◽  
Low Temperature ◽  
Chemical Reaction ◽  
Low Temperatures ◽  
Arbitrary Shape ◽  
Room Temperature ◽  
Surface Chemical ◽  
Surface Chemical Reaction ◽  
Temperature Growth

ABSTRACTThin films of A12O3 were prepared by sequential surface chemical reaction of trimethylaluminum and hydrogen peroxide at low temperatures. It has been found that hydrogen peroxide reacts very easily with trimethylaluminum, resulting in growth of A12O3 at the temperature as low as the room temperature. Another favorable feature of the technique is that the growth of excellent A12O3 occurs identically wherever the reactants reach, making it possible to completely coat the surface of the sample with arbitrary shape.

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