Effect of N2-annealing on n-type Si metal–oxide–semiconductor capacitors by using liquid-phase deposition SiO2

Gwo-Huei Yang; Wen-Tse Chang; Jun-Dar Hwang; Jun-Hung Lin; Yu-Hung Chen

doi:10.1049/mnl.2011.0472

Effect of N2-annealing on n-type Si metal–oxide–semiconductor capacitors by using liquid-phase deposition SiO2

Micro & Nano Letters ◽

10.1049/mnl.2011.0472 ◽

2011 ◽

Vol 6 (11) ◽

pp. 944 ◽

Cited By ~ 1

Author(s):

Gwo-Huei Yang ◽

Wen-Tse Chang ◽

Jun-Dar Hwang ◽

Jun-Hung Lin ◽

Yu-Hung Chen

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Liquid Phase Deposition ◽

N2 Annealing

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Metal oxide semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method

IEEE Photonics Technology Letters ◽

10.1109/68.481154 ◽

1996 ◽

Vol 8 (3) ◽

pp. 420-421 ◽

Cited By ~ 5

Author(s):

Yi-Pin Shen ◽

Jenn-Gwo Hwu

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Liquid Phase Deposition ◽

Deposition Method

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Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.086503 ◽

2009 ◽

Vol 48 (8) ◽

pp. 086503 ◽

Cited By ~ 1

Author(s):

Chung Yuan Kung ◽

Jun Dar Hwang ◽

Yu Hong Chen ◽

Pan Sheu Chen ◽

Hsun Joung Chan

Keyword(s):

Liquid Phase ◽

Electrical Properties ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Liquid Phase Deposition

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Cited By ~ 16

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.890599 ◽

2007 ◽

Vol 54 (3) ◽

pp. 418-424 ◽

Cited By ~ 20

Author(s):

Kuan-Wei Lee ◽

Kai-Lin Lee ◽

Xian-Zheng Lin ◽

Chao-Hsien Tu ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Impact Ionization ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Subthreshold Current ◽

Ionization Effect

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Cited By ~ 15

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Comments on "17.3% Efficiency Metal-oxide-semiconductor (MOS) Solar Cells With Liquid-phase-deposited Silicon Dioxide"

IEEE Electron Device Letters ◽

10.1109/led.1998.728908 ◽

1998 ◽

Vol 19 (11) ◽

pp. 447-447

Author(s):

A. Rohatgi ◽

J. Moschner

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Liquid-Phase Chemical and Biochemical Detection Using Fully Integrated Magnetically Actuated Complementary Metal Oxide Semiconductor Resonant Cantilever Sensor Systems

Analytical Chemistry ◽

10.1021/ac061795g ◽

2007 ◽

Vol 79 (4) ◽

pp. 1646-1654 ◽

Cited By ~ 56

Author(s):

Cyril Vančura ◽

Yue Li ◽

Jan Lichtenberg ◽

Kay-Uwe Kirstein ◽

Andreas Hierlemann ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Integrated ◽

Cantilever Sensor ◽

Magnetically Actuated ◽

Biochemical Detection ◽

Phase Chemical

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Comments on "17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide"

IEEE Electron Device Letters ◽

10.1109/55.728909 ◽

1998 ◽

Vol 19 (11) ◽

pp. 447-449

Author(s):

A. Rohatgi ◽

J. Moschner ◽

M.A. Green

Keyword(s):

Solar Cells ◽

Liquid Phase ◽

Metal Oxide ◽

Silicon Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.4900442 ◽

2014 ◽

Vol 105 (17) ◽

pp. 173502 ◽

Cited By ~ 21

Author(s):

Takuji Hosoi ◽

Yuichiro Suzuki ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Liquid Phase Epitaxy ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.4766917 ◽

2012 ◽

Vol 101 (20) ◽

pp. 202105 ◽

Cited By ~ 11

Author(s):

Yuichiro Suzuki ◽

Shimpei Ogiwara ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Liquid Phase Epitaxy ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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