Field-plated 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 9.1 W∕mm at 18 GHz

2005 ◽  
Vol 41 (19) ◽  
pp. 1080 ◽  
Author(s):  
V. Kumar ◽  
G. Chen ◽  
S. Guo ◽  
B. Peres ◽  
I. Eliasevich ◽  
...  
Keyword(s):  
Power Density ◽  
Gate Length ◽  
Gan Hemts

High performance 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 6.7 W∕mm at 18 GHz

2003 ◽  
Vol 39 (22) ◽  
pp. 1609 ◽  
Author(s):  
V. Kumar ◽  
J.-W. Lee ◽  
A. Kuliev ◽  
O. Aktas ◽  
R. Schwindt ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gate Length ◽  
Gan Hemts

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

2003 ◽  
Vol 47 (9) ◽  
pp. 1577-1580 ◽  
Author(s):  
V. Kumar ◽  
A. Kuliev ◽  
R. Schwindt ◽  
M. Muir ◽  
G. Simin ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gate Length ◽  
Gan Hemts

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

MBE growth of AlGaN∕GaN HEMTs with high power density

2002 ◽  
Vol 38 (25) ◽  
pp. 1740 ◽  
Author(s):  
D.S. Katzer ◽  
S.C. Binari ◽  
D.F. Storm ◽  
J.A. Roussos ◽  
B.V. Shanabrook ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Power Density ◽  
Mbe Growth ◽  
Gan Hemts

Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length

2006 ◽  
Vol 53 (6) ◽  
pp. 1477-1480 ◽  
Author(s):  
V. Kumar ◽  
Guang Chen ◽  
Shiping Guo ◽  
I. Adesida
Keyword(s):  
Gate Length ◽  
Field Plate ◽  
Plate Length ◽  
Gan Hemts

scholarly journals Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Cutoff Frequency ◽  
Equivalent Circuit Model ◽  
Scaling Behavior ◽  
Gate Length ◽  
High Electron ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Rf Applications ◽  
20 Nm

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

scholarly journals Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 76
Author(s):  
Huaixin Guo ◽  
Tangsheng Chen ◽  
Shang Shi
Keyword(s):  
Power Density ◽  
Power Amplifiers ◽  
Pulse Width ◽  
Thermal Response ◽  
Thermal Design ◽  
Transient Simulation ◽  
Gate Width ◽  
Channel Temperature ◽  
Gan Hemts ◽  
Transient Thermal

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.

High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm

2002 ◽  
Vol 38 (5) ◽  
pp. 252 ◽  
Author(s):  
V. Kumar ◽  
W. Lu ◽  
F.A. Khan ◽  
R. Schwindt ◽  
A. Kuliev ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Length ◽  
Gan Hemts

0.25 [micro sign]m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

2001 ◽  
Vol 37 (13) ◽  
pp. 858 ◽  
Author(s):  
V. Kumar ◽  
W. Lu ◽  
R. Schwindt ◽  
J. Van Hove ◽  
P. Chow ◽  
...  
Keyword(s):  
Gate Length ◽  
High Current ◽  
Gan Hemts
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