Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length

2006 ◽  
Vol 53 (6) ◽  
pp. 1477-1480 ◽  
Author(s):  
V. Kumar ◽  
Guang Chen ◽  
Shiping Guo ◽  
I. Adesida
Keyword(s):  
Gate Length ◽  
Field Plate ◽  
Plate Length ◽  
Gan Hemts

Laterally engineered field-plate GaN HEMTs for millimeter-wave applications

2008 ◽  
Vol 5 (6) ◽  
pp. 2022-2025
Author(s):  
K. S. Boutros ◽  
K. Shinohara ◽  
W. Ha ◽  
A. Paniagua ◽  
B. Brar
Keyword(s):  
Millimeter Wave ◽  
Field Plate ◽  
Gan Hemts

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 144-148
Author(s):  
Ling Sang ◽  
Jing Hua Xia ◽  
Liang Tian ◽  
Fei Yang ◽  
Rui Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Field Plate ◽  
Plate Length ◽  
Field Oxide

The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the oxide layer and field plate length of the SiC JBS diode. Two different field oxide deposition processes, which are plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD), are compared in our paper. When the reverse voltage is 6600V, the reverse leakage current of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 0.7 μA, which is 60% lower than that of PECVD process. When the forward current is 25 A, the forward voltage of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 3.75 V, which is 10% higher than that of PECVD process. There should be a trade-off between the forward and reverse characteristics in the actual high power and high temperature applications.

scholarly journals Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 406 ◽  
Author(s):  
Biyan Liao ◽  
Quanbin Zhou ◽  
Jian Qin ◽  
Hong Wang
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Structural Parameters ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Insulator Layer ◽  
Field Plate ◽  
2D Simulation ◽  
Gan Hemts ◽  
Drain Field

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

Novel field plate structure of AlGaN/GaN HEMTs

2007 ◽  
Vol 4 (7) ◽  
pp. 2736-2739 ◽  
Author(s):  
Akira Nakajima ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts
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