High performance 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 6.7 W∕mm at 18 GHz

2003 ◽  
Vol 39 (22) ◽  
pp. 1609 ◽  
Author(s):  
V. Kumar ◽  
J.-W. Lee ◽  
A. Kuliev ◽  
O. Aktas ◽  
R. Schwindt ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gate Length ◽  
Gan Hemts

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

2003 ◽  
Vol 47 (9) ◽  
pp. 1577-1580 ◽  
Author(s):  
V. Kumar ◽  
A. Kuliev ◽  
R. Schwindt ◽  
M. Muir ◽  
G. Simin ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gate Length ◽  
Gan Hemts

High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm

2002 ◽  
Vol 38 (5) ◽  
pp. 252 ◽  
Author(s):  
V. Kumar ◽  
W. Lu ◽  
F.A. Khan ◽  
R. Schwindt ◽  
A. Kuliev ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Length ◽  
Gan Hemts

Field-plated 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 9.1 W∕mm at 18 GHz

2005 ◽  
Vol 41 (19) ◽  
pp. 1080 ◽  
Author(s):  
V. Kumar ◽  
G. Chen ◽  
S. Guo ◽  
B. Peres ◽  
I. Eliasevich ◽  
...  
Keyword(s):  
Power Density ◽  
Gate Length ◽  
Gan Hemts

High performance GaN HEMTs at 40 GHz with power density of 2.8W/mm

2004 ◽  
Author(s):  
K. Boutros ◽  
M. Regan ◽  
P. Rowell ◽  
D. Gotthold ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gan Hemts

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Reliability-Oriented Design of Inverter-Fed Low-Voltage Electrical Machines: Potential Solutions

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4144
Author(s):  
Yatai Ji ◽  
Paolo Giangrande ◽  
Vincenzo Madonna ◽  
Weiduo Zhao ◽  
Michael Galea
Keyword(s):  
Power Density ◽  
High Speed ◽  
High Performance ◽  
Low Voltage ◽  
Electrical Machines ◽  
Design Stage ◽  
Switching Frequency ◽  
Special Focus ◽  
Electrical Machine ◽  
Engineering Approach

Transportation electrification has kept pushing low-voltage inverter-fed electrical machines to reach a higher power density while guaranteeing appropriate reliability levels. Methods commonly adopted to boost power density (i.e., higher current density, faster switching frequency for high speed, and higher DC link voltage) will unavoidably increase the stress to the insulation system which leads to a decrease in reliability. Thus, a trade-off is required between power density and reliability during the machine design. Currently, it is a challenging task to evaluate reliability during the design stage and the over-engineering approach is applied. To solve this problem, physics of failure (POF) is introduced and its feasibility for electrical machine (EM) design is discussed through reviewing past work on insulation investigation. Then the special focus is given to partial discharge (PD) whose occurrence means the end-of-life of low-voltage EMs. The PD-free design methodology based on understanding the physics of PD is presented to substitute the over-engineering approach. Finally, a comprehensive reliability-oriented design (ROD) approach adopting POF and PD-free design strategy is given as a potential solution for reliable and high-performance inverter-fed low-voltage EM design.

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

A high performance solid state asymmetric supercapacitor device based upon NiCo2O4nanosheets//MnO2microspheres

RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70292-70302 ◽  
Author(s):  
Syed Khalid ◽  
Chuanbao Cao ◽  
Lin Wang ◽  
Youqi Zhu ◽  
Yu Wu
Keyword(s):  
Solid State ◽  
Energy Density ◽  
Power Density ◽  
High Performance ◽  
Asymmetric Supercapacitor ◽  
State Device ◽  
Solid State Device

The volumetric energy density and power density of a novel solid state device (NiCo2O4//MnO2) are much higher than most reported devices.

High-performance capacitors based on NaNbO3 nanowires/poly(vinylidene fluoride) nanocomposites

2018 ◽  
Vol 6 (30) ◽  
pp. 14614-14622 ◽  
Author(s):  
Zhongbin Pan ◽  
Lingmin Yao ◽  
Guanglong Ge ◽  
Bo Shen ◽  
Jiwei Zhai
Keyword(s):  
Energy Density ◽  
Power Density ◽  
High Performance ◽  
Vinylidene Fluoride ◽  
Nanocomposite Films ◽  
Discharge Energy ◽  
High Discharge ◽  
Fast Discharge ◽  
Poly Vinylidene Fluoride ◽  
Discharge Energy Density

Nanocomposite films loaded with small NaNbO3 nanowires exhibit a high discharge energy density of 12.26 J cm−3 at 410 MV m−1, superior power density of 2.01 MW cm−3, and ultra-fast discharge speed of 146 ns.

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