0.25 [micro sign]m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT

2001 ◽  
Vol 37 (13) ◽  
pp. 858 ◽  
Author(s):  
V. Kumar ◽  
W. Lu ◽  
R. Schwindt ◽  
J. Van Hove ◽  
P. Chow ◽  
...  
Keyword(s):  
Gate Length ◽  
High Current ◽  
Gan Hemts

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length

2006 ◽  
Vol 53 (6) ◽  
pp. 1477-1480 ◽  
Author(s):  
V. Kumar ◽  
Guang Chen ◽  
Shiping Guo ◽  
I. Adesida
Keyword(s):  
Gate Length ◽  
Field Plate ◽  
Plate Length ◽  
Gan Hemts

scholarly journals Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Cutoff Frequency ◽  
Equivalent Circuit Model ◽  
Scaling Behavior ◽  
Gate Length ◽  
High Electron ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Rf Applications ◽  
20 Nm

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm

2002 ◽  
Vol 38 (5) ◽  
pp. 252 ◽  
Author(s):  
V. Kumar ◽  
W. Lu ◽  
F.A. Khan ◽  
R. Schwindt ◽  
A. Kuliev ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Length ◽  
Gan Hemts

Field-plated 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 9.1 W∕mm at 18 GHz

2005 ◽  
Vol 41 (19) ◽  
pp. 1080 ◽  
Author(s):  
V. Kumar ◽  
G. Chen ◽  
S. Guo ◽  
B. Peres ◽  
I. Eliasevich ◽  
...  
Keyword(s):  
Power Density ◽  
Gate Length ◽  
Gan Hemts

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer

2009 ◽  
Vol 30 (9) ◽  
pp. 913-915 ◽  
Author(s):  
Donghyun Kim ◽  
V. Kumar ◽  
Jaesun Lee ◽  
Minjun Yan ◽  
A.M. Dabiran ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Gate Length ◽  
Gan Hemts

Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs

1997 ◽  
Vol 33 (12) ◽  
pp. 1081 ◽  
Author(s):  
A.T. Ping ◽  
M. Asif Khan ◽  
Q. Chen ◽  
J.W. Yang ◽  
I. Adesida
Keyword(s):  
Gate Length ◽  
High Current

HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIRE

2009 ◽  
Vol 19 (01) ◽  
pp. 129-135
Author(s):  
JUNXIA SHI ◽  
M. POPHRISTIC ◽  
L. F. EASTMAN
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Design Parameters ◽  
Gate Length ◽  
High Current ◽  
Theoretical Limit ◽  
Power Switching ◽  
Sapphire Substrates ◽  
State Breakdown

AlGaN / GaN heterojunction field effect transistors (HFETs) on sapphire substrates for power-switching applications have been fabricated. Design parameters such as source-gate spacing (Lsg), gate length (Lg), and gate width (Wg) have been varied to check their effects on the device performances. For a gate-drain spacing (Lgd) of 10µm, a specific on-resistance (ARon) of 1.35mΩ-cm2 and off-state breakdown voltage (BV) of 770V was achieved, which is close to the 4- H SiC theoretical limit.

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

2003 ◽  
Vol 13 (3) ◽  
pp. 93-95 ◽  
Author(s):  
R.S. Schwindt ◽  
V. Kumar ◽  
A. Kuliev ◽  
G. Simin ◽  
J.W. Yang ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Power ◽  
Gate Length ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document