Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

2003 ◽  
Vol 39 (21) ◽  
pp. 1499 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
C.S. Lin ◽  
Y.S. Tsair ◽  
S.M. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Drain Current ◽  
Dielectric Thin Film ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage ◽  
High K Gate Dielectric

scholarly journals Fabrication and Characterization of amorphous Lanthanum Zirconate Gate Capacitors

2019 ◽  
Vol 8 (11) ◽  
pp. 2868-2872
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Gate Dielectric ◽  
Semiconductor Device ◽  
Oxide Semiconductor ◽  
Future Application ◽  
High K ◽  
La Doped ◽  
High K Gate Dielectric

A novel high-k gate dielectric material, i.e., Lanthanum-doped Zirconium oxide (La-doped ZrO2 ), has been thoroughly studied for applications in future metal oxide semiconductor field-effect transistor (MOSFET). The film's structural, chemical and electrical properties are investigated experimentally. The incorporation of La into ZrO2 impacted the electrical properties in terms of leakage current while not sacrificing its dielectric constant. The dielectric constant of 25 is achieved which is calculated from the C-V analysis taken from Agilent 1500A Semiconductor Device Analyzer. XRD, FTIR, EDX analysis were conducted to confirm the stoichiometry and bond formation of La2Zr2O7 . The sol-gel spin coating method is adopted to form a uniform thin film over p-Silicon substrate and Aluminium is evaporated in the eBeam technique as gate electrode to form an MIS capacitor. The La-doped ZrO2 film is hence a potential high-k gate dielectric for future application in MIS thin film transistors.

Simulation and Drain Current Performance analysis of High-K Gate Dielectric FinFET

Silicon ◽  
2021 ◽  
Author(s):  
M. Aditya ◽  
K. Srinivasa Rao ◽  
K. Girija Sravani ◽  
Koushik Guha
Keyword(s):  
Performance Analysis ◽  
Gate Dielectric ◽  
Drain Current ◽  
High K ◽  
High K Gate Dielectric

scholarly journals Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Polymers ◽  
2021 ◽  
Vol 13 (22) ◽  
pp. 3941
Author(s):  
Ching-Lin Fan ◽  
Hou-Yen Tsao ◽  
Yu-Shien Shiah ◽  
Che-Wei Yao ◽  
Po-Wei Cheng
Keyword(s):  
Thin Film ◽  
Performance Enhancement ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Control Sample ◽  
Drain Current ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
High K ◽  
Low K

In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm2/(Vs), 7 times higher than that of the control sample.

Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs

2016 ◽  
Vol 45 (8) ◽  
pp. 4407-4411 ◽  
Author(s):  
Xiaoqiang Chen ◽  
Hongbin Zhao ◽  
Yuhua Xiong ◽  
Feng Wei ◽  
Jun Du ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
High K ◽  
High K Gate Dielectric
Sign in / Sign up

Export Citation Format

Share Document