Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric

2014 ◽  
Author(s):  
Lingxuan Qian
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
High K ◽  
Amorphous Ingazno ◽  
High K Gate Dielectric

scholarly journals Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Jui-Feng Su
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
Large Current ◽  
High K ◽  
Dose Concentration ◽  
Top Contact

The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1), a large current ratio (>103) and a low operation voltage (<6 V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

Low voltage operated, sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

2013 ◽  
Vol 138 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
Beyong-Hwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
High K

Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

2003 ◽  
Vol 39 (21) ◽  
pp. 1499 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
C.S. Lin ◽  
Y.S. Tsair ◽  
S.M. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Drain Current ◽  
Dielectric Thin Film ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage ◽  
High K Gate Dielectric

scholarly journals Fabrication and Characterization of amorphous Lanthanum Zirconate Gate Capacitors

2019 ◽  
Vol 8 (11) ◽  
pp. 2868-2872
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Gate Dielectric ◽  
Semiconductor Device ◽  
Oxide Semiconductor ◽  
Future Application ◽  
High K ◽  
La Doped ◽  
High K Gate Dielectric

A novel high-k gate dielectric material, i.e., Lanthanum-doped Zirconium oxide (La-doped ZrO2 ), has been thoroughly studied for applications in future metal oxide semiconductor field-effect transistor (MOSFET). The film's structural, chemical and electrical properties are investigated experimentally. The incorporation of La into ZrO2 impacted the electrical properties in terms of leakage current while not sacrificing its dielectric constant. The dielectric constant of 25 is achieved which is calculated from the C-V analysis taken from Agilent 1500A Semiconductor Device Analyzer. XRD, FTIR, EDX analysis were conducted to confirm the stoichiometry and bond formation of La2Zr2O7 . The sol-gel spin coating method is adopted to form a uniform thin film over p-Silicon substrate and Aluminium is evaporated in the eBeam technique as gate electrode to form an MIS capacitor. The La-doped ZrO2 film is hence a potential high-k gate dielectric for future application in MIS thin film transistors.

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