AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length

2002 ◽  
Vol 38 (6) ◽  
pp. 288 ◽  
Author(s):  
P. Javorka ◽  
A. Alam ◽  
A. Fox ◽  
M. Marso ◽  
M. Heuken ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gate Length ◽  
Gan Hemts

Material and device issues of AlGaN/GaN HEMTs on silicon substrates

2003 ◽  
Vol 34 (5-8) ◽  
pp. 435-437 ◽  
Author(s):  
P. Javorka ◽  
A. Alam ◽  
M. Marso ◽  
M. Wolter ◽  
J. Kuzmik ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemts

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length

2006 ◽  
Vol 53 (6) ◽  
pp. 1477-1480 ◽  
Author(s):  
V. Kumar ◽  
Guang Chen ◽  
Shiping Guo ◽  
I. Adesida
Keyword(s):  
Gate Length ◽  
Field Plate ◽  
Plate Length ◽  
Gan Hemts

High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

2004 ◽  
Vol 25 (4) ◽  
pp. 167-169 ◽  
Author(s):  
A. Minko ◽  
V. Hoel ◽  
S. Lepilliet ◽  
G. Dambrine ◽  
J.C. DeJaeger ◽  
...  
Keyword(s):  
High Resistivity ◽  
Silicon Substrates ◽  
Noise Performance ◽  
Gan Hemts ◽  
High Resistivity Silicon

scholarly journals Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

2019 ◽  
Author(s):  
Melisa Ekin Gulseren ◽  
Berkay Bozok ◽  
Gokhan Kurt ◽  
Omer Ahmet Kayal ◽  
Mustafa Ozturk ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemts

scholarly journals Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Cutoff Frequency ◽  
Equivalent Circuit Model ◽  
Scaling Behavior ◽  
Gate Length ◽  
High Electron ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Rf Applications ◽  
20 Nm

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

Fabrication and characterization of high-voltage AlGaN/GaN HEMTs on silicon substrates (Conference Presentation)

2019 ◽  
Author(s):  
Anna Szerling ◽  
Marek Ekielski ◽  
Maciej Kozubal ◽  
Karolina Pagowska ◽  
Andrzej Taube ◽  
...  
Keyword(s):  
High Voltage ◽  
Silicon Substrates ◽  
Gan Hemts ◽  
Fabrication And Characterization
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